Solid solutions of CdxHg₁₋xTe:V:Mn, CdxHg₁₋xTe:Ti:Mn (x = 0.9 – 0.95): growth and properties
Single crystals of CdxHg₁₋xTe:V:Mn, CdxHg₁₋xTe:V: Mn (x = 0.9–0.95) with different concentrations of vanadium, titanium and manganese have been obtained via the modified Bridgman method and their optical, photoelectrical and galvano-magnetic properties have been studied. According to the performed i...
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Дата: | 2004 |
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Автори: | , , , , , , , |
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Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119135 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Цитувати: | Solid solutions of CdxHg₁₋xTe:V:Mn, CdxHg₁₋xTe:Ti:Mn (x = 0.9 – 0.95): growth and properties / S.Yu. Paranchych, Yu.V. Tanasyuk, V.R. Romanyuk, O.S. Romanyuk, V.M. Makogonenko, M.D. Andriychuk, S.V. Synylo, Yu.I. Ivonyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 227-230. — Бібліогр.: 13 назв. — англ. |
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irk-123456789-1191352017-06-05T03:02:27Z Solid solutions of CdxHg₁₋xTe:V:Mn, CdxHg₁₋xTe:Ti:Mn (x = 0.9 – 0.95): growth and properties Paranchych, S.Yu. Tanasyuk, Yu.V. Romanyuk, V.R. Romanyuk, O.S. Makogonenko, V.M. Andriychuk, M.D. Synylo, S.V. Ivonyak, Yu.I. Single crystals of CdxHg₁₋xTe:V:Mn, CdxHg₁₋xTe:V: Mn (x = 0.9–0.95) with different concentrations of vanadium, titanium and manganese have been obtained via the modified Bridgman method and their optical, photoelectrical and galvano-magnetic properties have been studied. According to the performed investigations, the grown crystals proved to be satisfactorily homogeneous and highly sensitive within technically important spectral range of 1–1.5 mm. Energy position of vanadium and titanium level in the material under investigation determined from R(T) dependence is of about 0.73–0.82 eV; 0.65–0.72 eV, respectively. 2004 Article Solid solutions of CdxHg₁₋xTe:V:Mn, CdxHg₁₋xTe:Ti:Mn (x = 0.9 – 0.95): growth and properties / S.Yu. Paranchych, Yu.V. Tanasyuk, V.R. Romanyuk, O.S. Romanyuk, V.M. Makogonenko, M.D. Andriychuk, S.V. Synylo, Yu.I. Ivonyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 227-230. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS: 42.65; 42.70; 61.70 http://dspace.nbuv.gov.ua/handle/123456789/119135 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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DSpace DC |
language |
English |
description |
Single crystals of CdxHg₁₋xTe:V:Mn, CdxHg₁₋xTe:V: Mn (x = 0.9–0.95) with different concentrations of vanadium, titanium and manganese have been obtained via the modified Bridgman method and their optical, photoelectrical and galvano-magnetic properties have been studied. According to the performed investigations, the grown crystals proved to be satisfactorily homogeneous and highly sensitive within technically important spectral range of 1–1.5 mm. Energy position of vanadium and titanium level in the material under investigation determined from R(T) dependence is of about 0.73–0.82 eV; 0.65–0.72 eV, respectively. |
format |
Article |
author |
Paranchych, S.Yu. Tanasyuk, Yu.V. Romanyuk, V.R. Romanyuk, O.S. Makogonenko, V.M. Andriychuk, M.D. Synylo, S.V. Ivonyak, Yu.I. |
spellingShingle |
Paranchych, S.Yu. Tanasyuk, Yu.V. Romanyuk, V.R. Romanyuk, O.S. Makogonenko, V.M. Andriychuk, M.D. Synylo, S.V. Ivonyak, Yu.I. Solid solutions of CdxHg₁₋xTe:V:Mn, CdxHg₁₋xTe:Ti:Mn (x = 0.9 – 0.95): growth and properties Semiconductor Physics Quantum Electronics & Optoelectronics |
author_facet |
Paranchych, S.Yu. Tanasyuk, Yu.V. Romanyuk, V.R. Romanyuk, O.S. Makogonenko, V.M. Andriychuk, M.D. Synylo, S.V. Ivonyak, Yu.I. |
author_sort |
Paranchych, S.Yu. |
title |
Solid solutions of CdxHg₁₋xTe:V:Mn, CdxHg₁₋xTe:Ti:Mn (x = 0.9 – 0.95): growth and properties |
title_short |
Solid solutions of CdxHg₁₋xTe:V:Mn, CdxHg₁₋xTe:Ti:Mn (x = 0.9 – 0.95): growth and properties |
title_full |
Solid solutions of CdxHg₁₋xTe:V:Mn, CdxHg₁₋xTe:Ti:Mn (x = 0.9 – 0.95): growth and properties |
title_fullStr |
Solid solutions of CdxHg₁₋xTe:V:Mn, CdxHg₁₋xTe:Ti:Mn (x = 0.9 – 0.95): growth and properties |
title_full_unstemmed |
Solid solutions of CdxHg₁₋xTe:V:Mn, CdxHg₁₋xTe:Ti:Mn (x = 0.9 – 0.95): growth and properties |
title_sort |
solid solutions of cdxhg₁₋xte:v:mn, cdxhg₁₋xte:ti:mn (x = 0.9 – 0.95): growth and properties |
publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
publishDate |
2004 |
url |
http://dspace.nbuv.gov.ua/handle/123456789/119135 |
citation_txt |
Solid solutions of CdxHg₁₋xTe:V:Mn, CdxHg₁₋xTe:Ti:Mn (x = 0.9 – 0.95): growth and properties / S.Yu. Paranchych, Yu.V. Tanasyuk, V.R. Romanyuk, O.S. Romanyuk, V.M. Makogonenko, M.D. Andriychuk, S.V. Synylo, Yu.I. Ivonyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 227-230. — Бібліогр.: 13 назв. — англ. |
series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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first_indexed |
2023-10-18T20:33:45Z |
last_indexed |
2023-10-18T20:33:45Z |
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