Effects of LO-phonon confinement on electron mobility in GaAs-Al₀.₄₅ Ga₀.₅₅As superlattice
The parallel and perpendicular electron mobilities in a GaAs-Al₀.₄₅ Ga₀.₅₅As superlattice have been calculated. The scattering of electrons by confined longitudinal optical phonons was taken into account. Using the quantum treatment, we offered the new wavefunction of electron miniband conduction in...
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| Дата: | 2004 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119210 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Effects of LO-phonon confinement on electron mobility in GaAs-Al₀.₄₅ Ga₀.₅₅As superlattice / D. Abouelaoualim // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 333-338. — Бібліогр.: 42 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1192102017-06-06T03:03:52Z Effects of LO-phonon confinement on electron mobility in GaAs-Al₀.₄₅ Ga₀.₅₅As superlattice Abouelaoualim, D. The parallel and perpendicular electron mobilities in a GaAs-Al₀.₄₅ Ga₀.₅₅As superlattice have been calculated. The scattering of electrons by confined longitudinal optical phonons was taken into account. Using the quantum treatment, we offered the new wavefunction of electron miniband conduction in the superlattice as well as reformulation of the slab model for confined LO-phonon modes. An expression for the relaxation time was obtained. Our results show that the relaxation time depends significantly on the total energy of electrons. The effect of the band nonparabolicity on the relaxation time was analyzed. At 300 K, the calculated results reveal that the electron mobility is enhanced when the well width in the superlattice is equal to 45 A. 2004 Article Effects of LO-phonon confinement on electron mobility in GaAs-Al₀.₄₅ Ga₀.₅₅As superlattice / D. Abouelaoualim // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 333-338. — Бібліогр.: 42 назв. — англ. 1560-8034 PACS: 63.2D.-e, 72.10.Di, 73.21.Cd http://dspace.nbuv.gov.ua/handle/123456789/119210 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The parallel and perpendicular electron mobilities in a GaAs-Al₀.₄₅ Ga₀.₅₅As superlattice have been calculated. The scattering of electrons by confined longitudinal optical phonons was taken into account. Using the quantum treatment, we offered the new wavefunction of electron miniband conduction in the superlattice as well as reformulation of the slab model for confined LO-phonon modes. An expression for the relaxation time was obtained. Our results show that the relaxation time depends significantly on the total energy of electrons. The effect of the band nonparabolicity on the relaxation time was analyzed. At 300 K, the calculated results reveal that the electron mobility is enhanced when the well width in the superlattice is equal to 45 A. |
| format |
Article |
| author |
Abouelaoualim, D. |
| spellingShingle |
Abouelaoualim, D. Effects of LO-phonon confinement on electron mobility in GaAs-Al₀.₄₅ Ga₀.₅₅As superlattice Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Abouelaoualim, D. |
| author_sort |
Abouelaoualim, D. |
| title |
Effects of LO-phonon confinement on electron mobility in GaAs-Al₀.₄₅ Ga₀.₅₅As superlattice |
| title_short |
Effects of LO-phonon confinement on electron mobility in GaAs-Al₀.₄₅ Ga₀.₅₅As superlattice |
| title_full |
Effects of LO-phonon confinement on electron mobility in GaAs-Al₀.₄₅ Ga₀.₅₅As superlattice |
| title_fullStr |
Effects of LO-phonon confinement on electron mobility in GaAs-Al₀.₄₅ Ga₀.₅₅As superlattice |
| title_full_unstemmed |
Effects of LO-phonon confinement on electron mobility in GaAs-Al₀.₄₅ Ga₀.₅₅As superlattice |
| title_sort |
effects of lo-phonon confinement on electron mobility in gaas-al₀.₄₅ ga₀.₅₅as superlattice |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2004 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/119210 |
| citation_txt |
Effects of LO-phonon confinement on electron mobility in GaAs-Al₀.₄₅ Ga₀.₅₅As superlattice / D. Abouelaoualim // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 333-338. — Бібліогр.: 42 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:34:01Z |
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