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Designing bandpass filters in 8 – 14 μm range for Si and Ge substrates

Designing bandpass filters in 8 – 14 μm range for Si and Ge substrates

Modular bandpass spectral filter for germanium and silicon substrates in 8 – 14 μm band applications have been proposed. The design approach, similar to antireflection coating design has been adopted to make the model simple with lesser number of layers. The full width half maximum (FWHM) value of t...

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Main Authors: Asghar, M.H., Khan, M.B., Naseem, S.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/119214
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spelling irk-123456789-1192142017-06-06T03:03:38Z Designing bandpass filters in 8 – 14 μm range for Si and Ge substrates Asghar, M.H. Khan, M.B. Naseem, S. Modular bandpass spectral filter for germanium and silicon substrates in 8 – 14 μm band applications have been proposed. The design approach, similar to antireflection coating design has been adopted to make the model simple with lesser number of layers. The full width half maximum (FWHM) value of the filter for the two substrates is varied by varying the refractive index of a single layer in the multilayer stack. The design is also analyzed for zero and 45 degree angles of incidence. The analysis has shown that the designed configuration exhibits identical behavior for these two substrates. The proposed configuration could be used for different optical and optoelectronic applications. 2004 Article Designing bandpass filters in 8 – 14 μm range for Si and Ge substrates / M.H. Asghar, M.B. Khan, S. Naseem // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 355-359. — Бібліогр.: 19 назв. — англ. 1560-8034 PACS: 42.79Wc, 78.20e http://dspace.nbuv.gov.ua/handle/123456789/119214 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Modular bandpass spectral filter for germanium and silicon substrates in 8 – 14 μm band applications have been proposed. The design approach, similar to antireflection coating design has been adopted to make the model simple with lesser number of layers. The full width half maximum (FWHM) value of the filter for the two substrates is varied by varying the refractive index of a single layer in the multilayer stack. The design is also analyzed for zero and 45 degree angles of incidence. The analysis has shown that the designed configuration exhibits identical behavior for these two substrates. The proposed configuration could be used for different optical and optoelectronic applications.
format Article
author Asghar, M.H.
Khan, M.B.
Naseem, S.
spellingShingle Asghar, M.H.
Khan, M.B.
Naseem, S.
Designing bandpass filters in 8 – 14 μm range for Si and Ge substrates
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Asghar, M.H.
Khan, M.B.
Naseem, S.
author_sort Asghar, M.H.
title Designing bandpass filters in 8 – 14 μm range for Si and Ge substrates
title_short Designing bandpass filters in 8 – 14 μm range for Si and Ge substrates
title_full Designing bandpass filters in 8 – 14 μm range for Si and Ge substrates
title_fullStr Designing bandpass filters in 8 – 14 μm range for Si and Ge substrates
title_full_unstemmed Designing bandpass filters in 8 – 14 μm range for Si and Ge substrates
title_sort designing bandpass filters in 8 – 14 μm range for si and ge substrates
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2004
url http://dspace.nbuv.gov.ua/handle/123456789/119214
citation_txt Designing bandpass filters in 8 – 14 μm range for Si and Ge substrates / M.H. Asghar, M.B. Khan, S. Naseem // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 355-359. — Бібліогр.: 19 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT asgharmh designingbandpassfiltersin814mmrangeforsiandgesubstrates
AT khanmb designingbandpassfiltersin814mmrangeforsiandgesubstrates
AT naseems designingbandpassfiltersin814mmrangeforsiandgesubstrates
first_indexed 2023-10-18T20:34:02Z
last_indexed 2023-10-18T20:34:02Z
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