Designing bandpass filters in 8 – 14 μm range for Si and Ge substrates
Modular bandpass spectral filter for germanium and silicon substrates in 8 – 14 μm band applications have been proposed. The design approach, similar to antireflection coating design has been adopted to make the model simple with lesser number of layers. The full width half maximum (FWHM) value of t...
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| Дата: | 2004 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119214 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Designing bandpass filters in 8 – 14 μm range for Si and Ge substrates / M.H. Asghar, M.B. Khan, S. Naseem // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 355-359. — Бібліогр.: 19 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-119214 |
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dspace |
| spelling |
irk-123456789-1192142017-06-06T03:03:38Z Designing bandpass filters in 8 – 14 μm range for Si and Ge substrates Asghar, M.H. Khan, M.B. Naseem, S. Modular bandpass spectral filter for germanium and silicon substrates in 8 – 14 μm band applications have been proposed. The design approach, similar to antireflection coating design has been adopted to make the model simple with lesser number of layers. The full width half maximum (FWHM) value of the filter for the two substrates is varied by varying the refractive index of a single layer in the multilayer stack. The design is also analyzed for zero and 45 degree angles of incidence. The analysis has shown that the designed configuration exhibits identical behavior for these two substrates. The proposed configuration could be used for different optical and optoelectronic applications. 2004 Article Designing bandpass filters in 8 – 14 μm range for Si and Ge substrates / M.H. Asghar, M.B. Khan, S. Naseem // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 355-359. — Бібліогр.: 19 назв. — англ. 1560-8034 PACS: 42.79Wc, 78.20e http://dspace.nbuv.gov.ua/handle/123456789/119214 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Modular bandpass spectral filter for germanium and silicon substrates in 8 – 14 μm band applications have been proposed. The design approach, similar to antireflection coating design has been adopted to make the model simple with lesser number of layers. The full width half maximum (FWHM) value of the filter for the two substrates is varied by varying the refractive index of a single layer in the multilayer stack. The design is also analyzed for zero and 45 degree angles of incidence. The analysis has shown that the designed configuration exhibits identical behavior for these two substrates. The proposed configuration could be used for different optical and optoelectronic applications. |
| format |
Article |
| author |
Asghar, M.H. Khan, M.B. Naseem, S. |
| spellingShingle |
Asghar, M.H. Khan, M.B. Naseem, S. Designing bandpass filters in 8 – 14 μm range for Si and Ge substrates Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Asghar, M.H. Khan, M.B. Naseem, S. |
| author_sort |
Asghar, M.H. |
| title |
Designing bandpass filters in 8 – 14 μm range for Si and Ge substrates |
| title_short |
Designing bandpass filters in 8 – 14 μm range for Si and Ge substrates |
| title_full |
Designing bandpass filters in 8 – 14 μm range for Si and Ge substrates |
| title_fullStr |
Designing bandpass filters in 8 – 14 μm range for Si and Ge substrates |
| title_full_unstemmed |
Designing bandpass filters in 8 – 14 μm range for Si and Ge substrates |
| title_sort |
designing bandpass filters in 8 – 14 μm range for si and ge substrates |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2004 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/119214 |
| citation_txt |
Designing bandpass filters in 8 – 14 μm range for Si and Ge substrates / M.H. Asghar, M.B. Khan, S. Naseem // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 355-359. — Бібліогр.: 19 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:34:02Z |
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