Chemical dynamic polishing CdTe and CdxHg₁–xTe single crystals by using solutions of H₂O₂–HCl–tartaric acid system
Dissolution of CdTe and CdxHg₁–xTe single crystals by using solutions of H₂O₂– HCl–tartaric acid system has been studied. The surfaces of equal etching rates were constructed and the limiting stages of the dissolution process were ascertained. Also determined were the concentration limits for the so...
Збережено в:
| Дата: | 2004 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119223 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Chemical dynamic polishing CdTe and CdxHg₁–xTe single crystals by using solutions of H₂O₂–HCl–tartaric acid system / Z.F. Tomashik, E.M. Lukiyanchuk, V.M. Tomashik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 452-455. — Бібліогр.: 6 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Dissolution of CdTe and CdxHg₁–xTe single crystals by using solutions of H₂O₂– HCl–tartaric acid system has been studied. The surfaces of equal etching rates were constructed and the limiting stages of the dissolution process were ascertained. Also determined were the concentration limits for the solutions that can be used for chemical polishing the above-mentioned semiconductor materials. |
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