Spectra of the photo-electric phenomena physically differentiated on the light absorption factor
The pleochroism phenomena in photoconductivity of Ge samples and gate photoelectomotive force (photo-emf) of Si samples were experimentally investigated by a polarization modulation method. Anisotropy of dielectric properties was created by uniaxial compression. The spectral characteristics of the p...
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| Дата: | 2004 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119230 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Spectra of the photo-electric phenomena physically differentiated on the light absorption factor / L.I. Berezhinsky, E.F. Venger, I.E. Matyash, B.K. Serdega // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 441-445. — Бібліогр.: 5 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-119230 |
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dspace |
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irk-123456789-1192302017-06-06T03:02:57Z Spectra of the photo-electric phenomena physically differentiated on the light absorption factor Berezhinsky, L.I. Venger, E.F. Matyash, I.E. Serdega, B.K. The pleochroism phenomena in photoconductivity of Ge samples and gate photoelectomotive force (photo-emf) of Si samples were experimentally investigated by a polarization modulation method. Anisotropy of dielectric properties was created by uniaxial compression. The spectral characteristics of the polarization difference describing above effects were measured. We found that: а) the pleochroism spectrum of photoconductivity is a derivative with respect to the absorption factor of a photocurrent function; b) the pleochroism spectrum of the gate photo-emf contains dichroic components, determined by the sample thickness, diffusion length of majority carriers, and layer thickness of a spatial charge. 2004 Article Spectra of the photo-electric phenomena physically differentiated on the light absorption factor / L.I. Berezhinsky, E.F. Venger, I.E. Matyash, B.K. Serdega // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 441-445. — Бібліогр.: 5 назв. — англ. 1560-8034 PACS: 72.40.+w http://dspace.nbuv.gov.ua/handle/123456789/119230 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The pleochroism phenomena in photoconductivity of Ge samples and gate photoelectomotive force (photo-emf) of Si samples were experimentally investigated by a polarization modulation method. Anisotropy of dielectric properties was created by uniaxial compression. The spectral characteristics of the polarization difference describing above effects were measured. We found that: а) the pleochroism spectrum of
photoconductivity is a derivative with respect to the absorption factor of a photocurrent function; b) the pleochroism spectrum of the gate photo-emf contains dichroic components, determined by the sample thickness, diffusion length of majority carriers, and layer thickness of a spatial charge. |
| format |
Article |
| author |
Berezhinsky, L.I. Venger, E.F. Matyash, I.E. Serdega, B.K. |
| spellingShingle |
Berezhinsky, L.I. Venger, E.F. Matyash, I.E. Serdega, B.K. Spectra of the photo-electric phenomena physically differentiated on the light absorption factor Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Berezhinsky, L.I. Venger, E.F. Matyash, I.E. Serdega, B.K. |
| author_sort |
Berezhinsky, L.I. |
| title |
Spectra of the photo-electric phenomena physically differentiated on the light absorption factor |
| title_short |
Spectra of the photo-electric phenomena physically differentiated on the light absorption factor |
| title_full |
Spectra of the photo-electric phenomena physically differentiated on the light absorption factor |
| title_fullStr |
Spectra of the photo-electric phenomena physically differentiated on the light absorption factor |
| title_full_unstemmed |
Spectra of the photo-electric phenomena physically differentiated on the light absorption factor |
| title_sort |
spectra of the photo-electric phenomena physically differentiated on the light absorption factor |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2004 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/119230 |
| citation_txt |
Spectra of the photo-electric phenomena physically differentiated on the light absorption factor / L.I. Berezhinsky, E.F. Venger, I.E. Matyash, B.K. Serdega // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 441-445. — Бібліогр.: 5 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:34:04Z |
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