Crystallochemistry of defects in lead telluride films
The crystallochemical model of vapor-phase epitaxy of the lead telluride films has been proposed with the supposition about the simultaneous formation of singly charged, doubly charged and electroneutral Frenkel defects in the cationic sublattice. It has been shown that in spite of the large concent...
Збережено в:
| Дата: | 2001 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119233 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Crystallochemistry of defects in lead telluride films / D.M. Freik, M.A. Ruvinskii, B.M. Ruvinskii, M.A. Galushchak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 5-8. — Бібліогр.: 13 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | The crystallochemical model of vapor-phase epitaxy of the lead telluride films has been proposed with the supposition about the simultaneous formation of singly charged, doubly charged and electroneutral Frenkel defects in the cationic sublattice. It has been shown that in spite of the large concentration of partly compensated doubly charged defects the singly charged Frenkel pairs Pbi⁺ and VPb⁻ also play an essential role in change carrier concentration in PbTe films. The results of numerical calculation agree with the available experimental data of the dependence of charge carrier's concentration in films upon the partial pressure of tellurium vapor and the deposition's temperature in the hot-wall method. |
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