Effect of surface condition on strain in semiconductor crystal sample
Using the optical-polarization technique with polarization modulation, we measured stresses due to surface tension in a single-crystalline silicon sample. Optical anisotropy distribution along the normal to the sample surface was studied at different state conditions, depending on its treatment. It...
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| Дата: | 2001 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119234 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Effect of surface condition on strain in semiconductor crystal sample / B.K. Serdega, E.V. Nikitenko, V.I. Prikhodenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 9-11. — Бібліогр.: 6 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-119234 |
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dspace |
| spelling |
irk-123456789-1192342017-06-06T03:04:08Z Effect of surface condition on strain in semiconductor crystal sample Serdega, B.K. Nikitenko, E.V. Prikhodenko, V.I. Using the optical-polarization technique with polarization modulation, we measured stresses due to surface tension in a single-crystalline silicon sample. Optical anisotropy distribution along the normal to the sample surface was studied at different state conditions, depending on its treatment. It was found that presence of a surface layer in the crystal, with physical properties differing from those in the bulk, gave rise to extended distribution of stresses in the uniform part of the crystal. 2001 Article Effect of surface condition on strain in semiconductor crystal sample / B.K. Serdega, E.V. Nikitenko, V.I. Prikhodenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 9-11. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS: 78.20.C http://dspace.nbuv.gov.ua/handle/123456789/119234 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Using the optical-polarization technique with polarization modulation, we measured stresses due to surface tension in a single-crystalline silicon sample. Optical anisotropy distribution along the normal to the sample surface was studied at different state conditions, depending on its treatment. It was found that presence of a surface layer in the crystal, with physical properties differing from those in the bulk, gave rise to extended distribution of stresses in the uniform part of the crystal. |
| format |
Article |
| author |
Serdega, B.K. Nikitenko, E.V. Prikhodenko, V.I. |
| spellingShingle |
Serdega, B.K. Nikitenko, E.V. Prikhodenko, V.I. Effect of surface condition on strain in semiconductor crystal sample Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Serdega, B.K. Nikitenko, E.V. Prikhodenko, V.I. |
| author_sort |
Serdega, B.K. |
| title |
Effect of surface condition on strain in semiconductor crystal sample |
| title_short |
Effect of surface condition on strain in semiconductor crystal sample |
| title_full |
Effect of surface condition on strain in semiconductor crystal sample |
| title_fullStr |
Effect of surface condition on strain in semiconductor crystal sample |
| title_full_unstemmed |
Effect of surface condition on strain in semiconductor crystal sample |
| title_sort |
effect of surface condition on strain in semiconductor crystal sample |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2001 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/119234 |
| citation_txt |
Effect of surface condition on strain in semiconductor crystal sample / B.K. Serdega, E.V. Nikitenko, V.I. Prikhodenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 9-11. — Бібліогр.: 6 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT serdegabk effectofsurfaceconditiononstraininsemiconductorcrystalsample AT nikitenkoev effectofsurfaceconditiononstraininsemiconductorcrystalsample AT prikhodenkovi effectofsurfaceconditiononstraininsemiconductorcrystalsample |
| first_indexed |
2023-10-18T20:34:05Z |
| last_indexed |
2023-10-18T20:34:05Z |
| _version_ |
1796150541212975104 |