Electrical properties of macroporous silicon structures
The dependencies of electron conductivity, concentration and mobility on pore size and concentration were investigated for macroporous silicon structures. The electron conductivity and concentration in two-layer structures of macroporous silicon, and also in a matrix of macroporous layers have a max...
Збережено в:
| Дата: | 2001 |
|---|---|
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119238 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Electrical properties of macroporous silicon structures / L.A. Karachevtseva, O.A. Lytvynenko, E.A. Malovichko, V.D. Sobolev, O.J. Stronska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 40-43. — Бібліогр.: 11 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-119238 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1192382017-06-06T03:02:27Z Electrical properties of macroporous silicon structures Karachevtseva, L.A. Lytvynenko, O.A. Malovichko, E.A. Sobolev, V.D. Stronska, O.J. The dependencies of electron conductivity, concentration and mobility on pore size and concentration were investigated for macroporous silicon structures. The electron conductivity and concentration in two-layer structures of macroporous silicon, and also in a matrix of macroporous layers have a maximum for a macropore volume of V = 0.3-0.4. Thus the electron mobility decreases monotonically. The experimental results were explained by a model based on the existence of electron-enriched regions around pores, with thickness ΔD ≈ 1 mm formed after electrochemical and chemical treatment of the macropore walls. 2001 Article Electrical properties of macroporous silicon structures / L.A. Karachevtseva, O.A. Lytvynenko, E.A. Malovichko, V.D. Sobolev, O.J. Stronska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 40-43. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS: 71.25.Rk, 81.60.Cp http://dspace.nbuv.gov.ua/handle/123456789/119238 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The dependencies of electron conductivity, concentration and mobility on pore size and concentration were investigated for macroporous silicon structures. The electron conductivity and concentration in two-layer structures of macroporous silicon, and also in a matrix of macroporous layers have a maximum for a macropore volume of V = 0.3-0.4. Thus the electron mobility decreases monotonically. The experimental results were explained by a model based on the existence of electron-enriched regions around pores, with thickness ΔD ≈ 1 mm formed after electrochemical and chemical treatment of the macropore walls. |
| format |
Article |
| author |
Karachevtseva, L.A. Lytvynenko, O.A. Malovichko, E.A. Sobolev, V.D. Stronska, O.J. |
| spellingShingle |
Karachevtseva, L.A. Lytvynenko, O.A. Malovichko, E.A. Sobolev, V.D. Stronska, O.J. Electrical properties of macroporous silicon structures Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Karachevtseva, L.A. Lytvynenko, O.A. Malovichko, E.A. Sobolev, V.D. Stronska, O.J. |
| author_sort |
Karachevtseva, L.A. |
| title |
Electrical properties of macroporous silicon structures |
| title_short |
Electrical properties of macroporous silicon structures |
| title_full |
Electrical properties of macroporous silicon structures |
| title_fullStr |
Electrical properties of macroporous silicon structures |
| title_full_unstemmed |
Electrical properties of macroporous silicon structures |
| title_sort |
electrical properties of macroporous silicon structures |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2001 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/119238 |
| citation_txt |
Electrical properties of macroporous silicon structures / L.A. Karachevtseva, O.A. Lytvynenko, E.A. Malovichko, V.D. Sobolev, O.J. Stronska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 40-43. — Бібліогр.: 11 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT karachevtsevala electricalpropertiesofmacroporoussiliconstructures AT lytvynenkooa electricalpropertiesofmacroporoussiliconstructures AT malovichkoea electricalpropertiesofmacroporoussiliconstructures AT sobolevvd electricalpropertiesofmacroporoussiliconstructures AT stronskaoj electricalpropertiesofmacroporoussiliconstructures |
| first_indexed |
2023-10-18T20:34:05Z |
| last_indexed |
2023-10-18T20:34:05Z |
| _version_ |
1796150541634502656 |