X-ray characterization of ZnSe single crystals doped with Mg
Doping of cubic ZnSe with certain impurities like Mg or Mn during crystal growth causes the increased contents of the hexagonal phase in the crystal or even the transformation to hexagonal wurtzite modification that possess the anisothropy of properties. This opens the possibility to design not only...
Збережено в:
| Дата: | 2001 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119255 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | X-ray characterization of ZnSe single crystals doped with Mg / A.G. Fedorov, Yu.A. Zagoruiko, O.A. Fedorenko, N.O. Kovalenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 118-122. — Бібліогр.: 4 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Doping of cubic ZnSe with certain impurities like Mg or Mn during crystal growth causes the increased contents of the hexagonal phase in the crystal or even the transformation to hexagonal wurtzite modification that possess the anisothropy of properties. This opens the possibility to design not only the passive optical elements of this material but provide them with controlling or measuring functions. In the present work the structure evolution of ZnSe single crystals due to the Mg doping of different concentration was examined using the double crystal X-ray spectrometer. |
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