Organosilicon luminencent compositions for scintillation detectors

Organosilicon luminencent compositions for scintillation detectors

Application of organosilicon materials in the detection devices is one of the promising directions in the improvement of their characteristics. Especially efficient are these materials when used as a polymer base of the converting elements. Described in this paper are compositions and results of...

Повний опис

Збережено в:
Бібліографічні деталі
Дата:2001
Автори: Andryuschenko, L.A., Goriletsky, V.I., Grinyov, B.V., Gavrilyuk, V.P., Zosim, D.I., Skripkina, V.T., Shershykov, V.M.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2001
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/119257
Теги: Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Organosilicon luminencent compositions for scintillation detectors / L.A. Andryuschenko, V.I. Goriletsky, B.V. Grinyov, V.P. Gavrilyuk, D.I. Zosim, V.T. Skripkina, V.M. Shershykov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 126-130. — Бібліогр.: 6 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-119257
record_format dspace
spelling irk-123456789-1192572017-06-06T03:03:18Z Organosilicon luminencent compositions for scintillation detectors Andryuschenko, L.A. Goriletsky, V.I. Grinyov, B.V. Gavrilyuk, V.P. Zosim, D.I. Skripkina, V.T. Shershykov, V.M. Application of organosilicon materials in the detection devices is one of the promising directions in the improvement of their characteristics. Especially efficient are these materials when used as a polymer base of the converting elements. Described in this paper are compositions and results of the use of polymer luminescent compositions for the increase of chemical resistance and improvement of CsI and CsI (Tl) crystals' characteristics; the latter being in the form of the truncated pyramids with the cross-section as a polygonal and up to 320 mm long. They are intended for furnishing complex modular systems of calorimeters. The authors studied the effect of the polymer structure (of the stair and branched structure), chemical nature of the luminescent admixtures and their concentration in the composition on the variation of scintillation and performance characteristics of the detectors. It was shown that application of thin film (15±5 μm) siloxane spectrum shifting coatings to all the facets of the pyramid except for the base which serves as the output window allows not only to reliably protect the scintillator from the effect of the atmosphere moisture but also to correct efficiently its characteristics. The advantage of such coatings is a high stability of their optical and luminescent properties in time, good adhesion and chemical inertness to the scintillator material. Application of siloxane compositions as coating for CsI gives a possibility to shift the intrinsic luminescence of the crystal towards the region of a higher transparency of the material and better sensitivity of PMT, this allowing to increase the light yield of the fast component by the factor of 1.5. In case of CsI the nonuniformity of the light yield along the pyramid can be lowered while not worsening but even increasing the mean light yield. Such coating is easily removed by a solvent and applied again to the surface not changing the size of the scintillator and the grade of surface treatment. 2001 Article Organosilicon luminencent compositions for scintillation detectors / L.A. Andryuschenko, V.I. Goriletsky, B.V. Grinyov, V.P. Gavrilyuk, D.I. Zosim, V.T. Skripkina, V.M. Shershykov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 126-130. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS: 29.40.M, 78.60 http://dspace.nbuv.gov.ua/handle/123456789/119257 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Application of organosilicon materials in the detection devices is one of the promising directions in the improvement of their characteristics. Especially efficient are these materials when used as a polymer base of the converting elements. Described in this paper are compositions and results of the use of polymer luminescent compositions for the increase of chemical resistance and improvement of CsI and CsI (Tl) crystals' characteristics; the latter being in the form of the truncated pyramids with the cross-section as a polygonal and up to 320 mm long. They are intended for furnishing complex modular systems of calorimeters. The authors studied the effect of the polymer structure (of the stair and branched structure), chemical nature of the luminescent admixtures and their concentration in the composition on the variation of scintillation and performance characteristics of the detectors. It was shown that application of thin film (15±5 μm) siloxane spectrum shifting coatings to all the facets of the pyramid except for the base which serves as the output window allows not only to reliably protect the scintillator from the effect of the atmosphere moisture but also to correct efficiently its characteristics. The advantage of such coatings is a high stability of their optical and luminescent properties in time, good adhesion and chemical inertness to the scintillator material. Application of siloxane compositions as coating for CsI gives a possibility to shift the intrinsic luminescence of the crystal towards the region of a higher transparency of the material and better sensitivity of PMT, this allowing to increase the light yield of the fast component by the factor of 1.5. In case of CsI the nonuniformity of the light yield along the pyramid can be lowered while not worsening but even increasing the mean light yield. Such coating is easily removed by a solvent and applied again to the surface not changing the size of the scintillator and the grade of surface treatment.
format Article
author Andryuschenko, L.A.
Goriletsky, V.I.
Grinyov, B.V.
Gavrilyuk, V.P.
Zosim, D.I.
Skripkina, V.T.
Shershykov, V.M.
spellingShingle Andryuschenko, L.A.
Goriletsky, V.I.
Grinyov, B.V.
Gavrilyuk, V.P.
Zosim, D.I.
Skripkina, V.T.
Shershykov, V.M.
Organosilicon luminencent compositions for scintillation detectors
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Andryuschenko, L.A.
Goriletsky, V.I.
Grinyov, B.V.
Gavrilyuk, V.P.
Zosim, D.I.
Skripkina, V.T.
Shershykov, V.M.
author_sort Andryuschenko, L.A.
title Organosilicon luminencent compositions for scintillation detectors
title_short Organosilicon luminencent compositions for scintillation detectors
title_full Organosilicon luminencent compositions for scintillation detectors
title_fullStr Organosilicon luminencent compositions for scintillation detectors
title_full_unstemmed Organosilicon luminencent compositions for scintillation detectors
title_sort organosilicon luminencent compositions for scintillation detectors
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2001
url http://dspace.nbuv.gov.ua/handle/123456789/119257
citation_txt Organosilicon luminencent compositions for scintillation detectors / L.A. Andryuschenko, V.I. Goriletsky, B.V. Grinyov, V.P. Gavrilyuk, D.I. Zosim, V.T. Skripkina, V.M. Shershykov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 126-130. — Бібліогр.: 6 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT andryuschenkola organosiliconluminencentcompositionsforscintillationdetectors
AT goriletskyvi organosiliconluminencentcompositionsforscintillationdetectors
AT grinyovbv organosiliconluminencentcompositionsforscintillationdetectors
AT gavrilyukvp organosiliconluminencentcompositionsforscintillationdetectors
AT zosimdi organosiliconluminencentcompositionsforscintillationdetectors
AT skripkinavt organosiliconluminencentcompositionsforscintillationdetectors
AT shershykovvm organosiliconluminencentcompositionsforscintillationdetectors
first_indexed 2023-10-18T20:34:08Z
last_indexed 2023-10-18T20:34:08Z
_version_ 1796150543326904320

Схожі ресурси