Silver-related local centres in cadmium sulfide
Silver-related defects and their diffusion in CdS crystals were investigated. The impurity was introduced in the crystal and extracted from it under electric field Ed = 10² V/cm at T = 300-450°C both parallel and perpendicular to the c-axis. The only local centre that was proved to appear after Ag i...
Збережено в:
| Дата: | 2001 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119266 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Silver-related local centres in cadmium sulfide / L.V. Borkovskaya, B.M. Bulakh, L.Yu. Khomenkova, I.V. Markevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 163-167. — Бібліогр.: 16 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Silver-related defects and their diffusion in CdS crystals were investigated. The impurity was introduced in the crystal and extracted from it under electric field Ed = 10² V/cm at T = 300-450°C both parallel and perpendicular to the c-axis. The only local centre that was proved to appear after Ag introduction and to disappear after its extraction was deep acceptor responsible for emission band λm = 610 nm. Photo-enhanced defect reaction resulting in photosensitivity degradation was shown to occur after Ag incorporation. It was found that diffusion anisotropy took place, Ag diffusion being some times faster parallel to the c-axis. |
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