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Characterization of «solar» multicrystalline silicon by local measurements

Characterization of «solar» multicrystalline silicon by local measurements

The features of local measurements of «solar» multicrystalline silicon (mc-Si) parameters are surveyed using examples of grain sizes, diffusion length of minority non-equilibrium charge carriers Ld and effective reflectivity of light R. It is revealed that the crystal grains in mc-Si have 4 groups o...

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Main Author: Popov, V.G.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2001
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/119271
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spelling irk-123456789-1192712017-06-06T03:04:27Z Characterization of «solar» multicrystalline silicon by local measurements Popov, V.G. The features of local measurements of «solar» multicrystalline silicon (mc-Si) parameters are surveyed using examples of grain sizes, diffusion length of minority non-equilibrium charge carriers Ld and effective reflectivity of light R. It is revealed that the crystal grains in mc-Si have 4 groups of the reference sizes. The errors of the single local measurements of parameters are spotted. It is shown that the values of explored parameters are distributed under the normal law (the Gauss function). The algorithm to obtain the average values of mc-Si parameters with given precision is described. The used experimental procedures for the express non-destructive check of Ld and R in the mc-Si samples are briefly considered. 2001 Article Characterization of «solar» multicrystalline silicon by local measurements/ V.G. Popov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 182-186. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS: 84.60.J http://dspace.nbuv.gov.ua/handle/123456789/119271 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The features of local measurements of «solar» multicrystalline silicon (mc-Si) parameters are surveyed using examples of grain sizes, diffusion length of minority non-equilibrium charge carriers Ld and effective reflectivity of light R. It is revealed that the crystal grains in mc-Si have 4 groups of the reference sizes. The errors of the single local measurements of parameters are spotted. It is shown that the values of explored parameters are distributed under the normal law (the Gauss function). The algorithm to obtain the average values of mc-Si parameters with given precision is described. The used experimental procedures for the express non-destructive check of Ld and R in the mc-Si samples are briefly considered.
format Article
author Popov, V.G.
spellingShingle Popov, V.G.
Characterization of «solar» multicrystalline silicon by local measurements
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Popov, V.G.
author_sort Popov, V.G.
title Characterization of «solar» multicrystalline silicon by local measurements
title_short Characterization of «solar» multicrystalline silicon by local measurements
title_full Characterization of «solar» multicrystalline silicon by local measurements
title_fullStr Characterization of «solar» multicrystalline silicon by local measurements
title_full_unstemmed Characterization of «solar» multicrystalline silicon by local measurements
title_sort characterization of «solar» multicrystalline silicon by local measurements
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2001
url http://dspace.nbuv.gov.ua/handle/123456789/119271
citation_txt Characterization of «solar» multicrystalline silicon by local measurements/ V.G. Popov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 182-186. — Бібліогр.: 9 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT popovvg characterizationofsolarmulticrystallinesiliconbylocalmeasurements
first_indexed 2023-10-18T20:34:10Z
last_indexed 2023-10-18T20:34:10Z
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