Some features of transverse photovoltage in semiconductor heterostructure and Schottky contact
We investigated transverse photovoltage generated in semiconductor heterostructures by a modulated illumination. A complicated form of the photovoltage spectral curves for Ge-GaAs heterostructures and NbN-GaAs Schottky contacts is determined by interaction between photocurrents flowing in the bulk a...
Збережено в:
| Дата: | 2001 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119315 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Some features of transverse photovoltage in semiconductor heterostructure and Schottky contact / L.V. Shekhovtsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 253-259. — Бібліогр.: 21 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-119315 |
|---|---|
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dspace |
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irk-123456789-1193152017-06-07T03:03:44Z Some features of transverse photovoltage in semiconductor heterostructure and Schottky contact Shekhovtsov, L.V. We investigated transverse photovoltage generated in semiconductor heterostructures by a modulated illumination. A complicated form of the photovoltage spectral curves for Ge-GaAs heterostructures and NbN-GaAs Schottky contacts is determined by interaction between photocurrents flowing in the bulk and near interfaces. An additional unmodulated illumination of the samples during the measurements of the photovoltage spectral curves changes the interaction of photocurrents. This leads to modification of the photovoltage spectral curves. An analysis of their features enables one to put forward models for interaction of photocurrents flowing near the interfaces and obtain the characteristics of the interface uniformity in composite semiconductor structures. 2001 Article Some features of transverse photovoltage in semiconductor heterostructure and Schottky contact / L.V. Shekhovtsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 253-259. — Бібліогр.: 21 назв. — англ. 1560-8034 PACS: 73.30.+y, 73.40.Kp, 73.50.Pz http://dspace.nbuv.gov.ua/handle/123456789/119315 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
We investigated transverse photovoltage generated in semiconductor heterostructures by a modulated illumination. A complicated form of the photovoltage spectral curves for Ge-GaAs heterostructures and NbN-GaAs Schottky contacts is determined by interaction between photocurrents flowing in the bulk and near interfaces.
An additional unmodulated illumination of the samples during the measurements of the photovoltage spectral curves changes the interaction of photocurrents. This leads to modification of the photovoltage spectral curves. An analysis of their features enables one to put forward models for interaction of photocurrents flowing near the interfaces and obtain the characteristics of the interface uniformity in composite semiconductor structures. |
| format |
Article |
| author |
Shekhovtsov, L.V. |
| spellingShingle |
Shekhovtsov, L.V. Some features of transverse photovoltage in semiconductor heterostructure and Schottky contact Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Shekhovtsov, L.V. |
| author_sort |
Shekhovtsov, L.V. |
| title |
Some features of transverse photovoltage in semiconductor heterostructure and Schottky contact |
| title_short |
Some features of transverse photovoltage in semiconductor heterostructure and Schottky contact |
| title_full |
Some features of transverse photovoltage in semiconductor heterostructure and Schottky contact |
| title_fullStr |
Some features of transverse photovoltage in semiconductor heterostructure and Schottky contact |
| title_full_unstemmed |
Some features of transverse photovoltage in semiconductor heterostructure and Schottky contact |
| title_sort |
some features of transverse photovoltage in semiconductor heterostructure and schottky contact |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2001 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/119315 |
| citation_txt |
Some features of transverse photovoltage in semiconductor heterostructure and Schottky contact / L.V. Shekhovtsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 253-259. — Бібліогр.: 21 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT shekhovtsovlv somefeaturesoftransversephotovoltageinsemiconductorheterostructureandschottkycontact |
| first_indexed |
2023-10-18T20:34:16Z |
| last_indexed |
2023-10-18T20:34:16Z |
| _version_ |
1796150547351339008 |