Behaviour of manganese impurity in β-ZnP₂
Behavior of manganese impurity in black zinc diphosphide was investigated for the first time by the EPR method at room temperature. The nature of basic singularities of an EPR spectrum was determined. The defect structure evolution of irradiated and annealed ZnP₂ was studied by the method of the par...
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Дата: | 2001 |
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Автори: | , , , |
Формат: | Стаття |
Мова: | English |
Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119318 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Цитувати: | Behaviour of manganese impurity in β-ZnP₂ / M. Kakazej, A. Kudin, M. Pinkovs’ka, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 264-272. — Бібліогр.: 42 назв. — англ. |
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irk-123456789-1193182017-06-07T03:04:03Z Behaviour of manganese impurity in β-ZnP₂ Kakazej, M. Kudin, A. Pinkovs’ka, M. Tartachnyk, V. Behavior of manganese impurity in black zinc diphosphide was investigated for the first time by the EPR method at room temperature. The nature of basic singularities of an EPR spectrum was determined. The defect structure evolution of irradiated and annealed ZnP₂ was studied by the method of the paramagnetic probe (Mn²⁺). 2001 Article Behaviour of manganese impurity in β-ZnP₂ / M. Kakazej, A. Kudin, M. Pinkovs’ka, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 264-272. — Бібліогр.: 42 назв. — англ. 1560-8034 PACS: 61.72 http://dspace.nbuv.gov.ua/handle/123456789/119318 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
collection |
DSpace DC |
language |
English |
description |
Behavior of manganese impurity in black zinc diphosphide was investigated for the first time by the EPR method at room temperature. The nature of basic singularities of an EPR spectrum was determined. The defect structure evolution of irradiated and annealed ZnP₂ was studied by the method of the paramagnetic probe (Mn²⁺). |
format |
Article |
author |
Kakazej, M. Kudin, A. Pinkovs’ka, M. Tartachnyk, V. |
spellingShingle |
Kakazej, M. Kudin, A. Pinkovs’ka, M. Tartachnyk, V. Behaviour of manganese impurity in β-ZnP₂ Semiconductor Physics Quantum Electronics & Optoelectronics |
author_facet |
Kakazej, M. Kudin, A. Pinkovs’ka, M. Tartachnyk, V. |
author_sort |
Kakazej, M. |
title |
Behaviour of manganese impurity in β-ZnP₂ |
title_short |
Behaviour of manganese impurity in β-ZnP₂ |
title_full |
Behaviour of manganese impurity in β-ZnP₂ |
title_fullStr |
Behaviour of manganese impurity in β-ZnP₂ |
title_full_unstemmed |
Behaviour of manganese impurity in β-ZnP₂ |
title_sort |
behaviour of manganese impurity in β-znp₂ |
publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
publishDate |
2001 |
url |
http://dspace.nbuv.gov.ua/handle/123456789/119318 |
citation_txt |
Behaviour of manganese impurity in β-ZnP₂ / M. Kakazej, A. Kudin, M. Pinkovs’ka, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 264-272. — Бібліогр.: 42 назв. — англ. |
series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
work_keys_str_mv |
AT kakazejm behaviourofmanganeseimpurityinbznp2 AT kudina behaviourofmanganeseimpurityinbznp2 AT pinkovskam behaviourofmanganeseimpurityinbznp2 AT tartachnykv behaviourofmanganeseimpurityinbznp2 |
first_indexed |
2023-10-18T20:34:17Z |
last_indexed |
2023-10-18T20:34:17Z |
_version_ |
1796150547670106112 |