The impact of laser shock waves on anodic oxide - compound semiconductor interface
The present work shows that the induced positive charge value at the anodic oxide -HgCdTe (AO-MCT) interface reaches its constant value (6.0±1.0)•10¹¹ cm⁻² under laser shock wave (LSW) treatment. We demonstrate that this treatment decreases electron concentration in a converted n-type layer by one o...
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| Дата: | 2001 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119323 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | The impact of laser shock waves on anodic oxide - compound semiconductor interface / V.S. Yakovyna, N.N. Berchenko, Yu.N. Nikiforov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 283-286. — Бібліогр.: 12 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-119323 |
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dspace |
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irk-123456789-1193232017-06-07T03:04:34Z The impact of laser shock waves on anodic oxide - compound semiconductor interface Yakovyna, V.S. Berchenko, N.N. Nikiforov, Yu.N. The present work shows that the induced positive charge value at the anodic oxide -HgCdTe (AO-MCT) interface reaches its constant value (6.0±1.0)•10¹¹ cm⁻² under laser shock wave (LSW) treatment. We demonstrate that this treatment decreases electron concentration in a converted n-type layer by one order of magnitude in annealed AO-MCT based structures, and the annealing time needed to have this layer disappeared decreases as well. The model of LSW impact on the AO-MCT interface is analysed. Remove selected 2001 Article The impact of laser shock waves on anodic oxide - compound semiconductor interface / V.S. Yakovyna, N.N. Berchenko, Yu.N. Nikiforov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 283-286. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS: 62.50.+p, 68.35.Dv http://dspace.nbuv.gov.ua/handle/123456789/119323 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The present work shows that the induced positive charge value at the anodic oxide -HgCdTe (AO-MCT) interface reaches its constant value (6.0±1.0)•10¹¹ cm⁻² under laser shock wave (LSW) treatment. We demonstrate that this treatment decreases electron concentration in a converted n-type layer by one order of magnitude in annealed AO-MCT based structures, and the annealing time needed to have this layer disappeared decreases as well. The model of LSW impact on the AO-MCT interface is analysed.
Remove selected |
| format |
Article |
| author |
Yakovyna, V.S. Berchenko, N.N. Nikiforov, Yu.N. |
| spellingShingle |
Yakovyna, V.S. Berchenko, N.N. Nikiforov, Yu.N. The impact of laser shock waves on anodic oxide - compound semiconductor interface Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Yakovyna, V.S. Berchenko, N.N. Nikiforov, Yu.N. |
| author_sort |
Yakovyna, V.S. |
| title |
The impact of laser shock waves on anodic oxide - compound semiconductor interface |
| title_short |
The impact of laser shock waves on anodic oxide - compound semiconductor interface |
| title_full |
The impact of laser shock waves on anodic oxide - compound semiconductor interface |
| title_fullStr |
The impact of laser shock waves on anodic oxide - compound semiconductor interface |
| title_full_unstemmed |
The impact of laser shock waves on anodic oxide - compound semiconductor interface |
| title_sort |
impact of laser shock waves on anodic oxide - compound semiconductor interface |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2001 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/119323 |
| citation_txt |
The impact of laser shock waves on anodic oxide - compound semiconductor interface / V.S. Yakovyna, N.N. Berchenko, Yu.N. Nikiforov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 283-286. — Бібліогр.: 12 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:34:17Z |
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