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Hopping conductivity in GaSe monocrystals at low temperatures
The paper represents results of investigation in the wide temperature interval (4.2…300) K of hopping conductivity in GaSe single crystals doped by cadmium impurities (0.01 and 0.1 atomic percent) during crystal growing. Specific resistance of GaSe doped by cadmium at room temperature is equal to 31...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/119326 |
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irk-123456789-1193262017-06-07T03:03:26Z Hopping conductivity in GaSe monocrystals at low temperatures Pashayev, A.M. Gadjiyev, A.R. Tagiyev, T.B. Abbasova, T.M. The paper represents results of investigation in the wide temperature interval (4.2…300) K of hopping conductivity in GaSe single crystals doped by cadmium impurities (0.01 and 0.1 atomic percent) during crystal growing. Specific resistance of GaSe doped by cadmium at room temperature is equal to 31 and 250.0 ohm•cm, concentration of impurities is 10¹⁵ and 2.0×10¹⁶ cm⁻³, mobilities are equal to 25.0 and 12.0 cm2/V•sec, respectively. It is ascertained that specific resistance weakly depends on temperature at (5…33)K, activation energy of this conductivity is 1.2×10⁻³ eV, and it is determined by hopping mechanism of charge transfer. At temperatures (33…100)K, activation energy of conductivity is 7.8×10⁻² eV, and it is connected with hole transfer in empty band. 2001 Article Hopping conductivity in GaSe monocrystals at low temperatures / A.M. Pashayev, A.R. Gadjiyev, T.B. Tagiyev, T.M. Abbasova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 287-289. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS: 72.20.F; 73.50.F; 84.37 http://dspace.nbuv.gov.ua/handle/123456789/119326 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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English |
| description |
The paper represents results of investigation in the wide temperature interval (4.2…300) K of hopping conductivity in GaSe single crystals doped by cadmium impurities (0.01 and 0.1 atomic percent) during crystal growing. Specific resistance of GaSe doped by cadmium at room temperature is equal to 31 and 250.0 ohm•cm, concentration of impurities is 10¹⁵ and 2.0×10¹⁶ cm⁻³, mobilities are equal to 25.0 and 12.0 cm2/V•sec, respectively. It is ascertained that specific resistance weakly depends on temperature at (5…33)K, activation energy of this conductivity is 1.2×10⁻³ eV, and it is determined by hopping mechanism of charge transfer. At temperatures (33…100)K, activation energy of conductivity is 7.8×10⁻² eV, and it is connected with hole transfer in empty band. |
| format |
Article |
| author |
Pashayev, A.M. Gadjiyev, A.R. Tagiyev, T.B. Abbasova, T.M. |
| spellingShingle |
Pashayev, A.M. Gadjiyev, A.R. Tagiyev, T.B. Abbasova, T.M. Hopping conductivity in GaSe monocrystals at low temperatures Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Pashayev, A.M. Gadjiyev, A.R. Tagiyev, T.B. Abbasova, T.M. |
| author_sort |
Pashayev, A.M. |
| title |
Hopping conductivity in GaSe monocrystals at low temperatures |
| title_short |
Hopping conductivity in GaSe monocrystals at low temperatures |
| title_full |
Hopping conductivity in GaSe monocrystals at low temperatures |
| title_fullStr |
Hopping conductivity in GaSe monocrystals at low temperatures |
| title_full_unstemmed |
Hopping conductivity in GaSe monocrystals at low temperatures |
| title_sort |
hopping conductivity in gase monocrystals at low temperatures |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2001 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/119326 |
| citation_txt |
Hopping conductivity in GaSe monocrystals at low temperatures / A.M. Pashayev, A.R. Gadjiyev, T.B. Tagiyev, T.M. Abbasova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 287-289. — Бібліогр.: 8 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT pashayevam hoppingconductivityingasemonocrystalsatlowtemperatures AT gadjiyevar hoppingconductivityingasemonocrystalsatlowtemperatures AT tagiyevtb hoppingconductivityingasemonocrystalsatlowtemperatures AT abbasovatm hoppingconductivityingasemonocrystalsatlowtemperatures |
| first_indexed |
2023-10-18T20:34:18Z |
| last_indexed |
2023-10-18T20:34:18Z |
| _version_ |
1796150548513161216 |