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Hopping conductivity in GaSe monocrystals at low temperatures
The paper represents results of investigation in the wide temperature interval (4.2…300) K of hopping conductivity in GaSe single crystals doped by cadmium impurities (0.01 and 0.1 atomic percent) during crystal growing. Specific resistance of GaSe doped by cadmium at room temperature is equal to 31...
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| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/119326 |
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