Investigation of ArF* excimer laser VUV radiation action on sapphire
Aluminium components of products escaped from the surface of a sapphire target being illuminated by VUV emission of an ArF* laser are investigated using the method of laser-induced fluorescence combined with the transient time technique. Relative concentrations of aluminium atoms and ions as well as...
Збережено в:
| Дата: | 2001 |
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| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119330 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Investigation of ArF* excimer laser VUV radiation action on sapphire / S.M. Baschenko, K.S. Gochelashvili, R.M. Zakirov, V.I. Klimov, V.T. Mikhkelsoo, O.M. Prokhorov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 290-297. — Бібліогр.: 14 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-119330 |
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dspace |
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irk-123456789-1193302017-06-07T03:02:53Z Investigation of ArF* excimer laser VUV radiation action on sapphire Baschenko, S.M. Gochelashvili, K.S. Zakirov, R.M. Klimov, V.I. Mikhkelsoo, V.T. Prokhorov, O.M. Aluminium components of products escaped from the surface of a sapphire target being illuminated by VUV emission of an ArF* laser are investigated using the method of laser-induced fluorescence combined with the transient time technique. Relative concentrations of aluminium atoms and ions as well as their distribution on velocities in the flow are measured. Determined is also the temperature and velocity of aluminium atoms. It is ascertained that within the range of used energy densities of 0.45 to 1.0 J/cm² extraction of materials can be made in three regimes, namely: the ablation, the plasma and mixed ones, intertransitions between them being of a cyclic character. 2001 Article Investigation of ArF* excimer laser VUV radiation action on sapphire / S.M. Baschenko, K.S. Gochelashvili, R.M. Zakirov, V.I. Klimov, V.T. Mikhkelsoo, O.M. Prokhorov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 290-297. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS: 32.50; 42.55.L; 79.20.D http://dspace.nbuv.gov.ua/handle/123456789/119330 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Aluminium components of products escaped from the surface of a sapphire target being illuminated by VUV emission of an ArF* laser are investigated using the method of laser-induced fluorescence combined with the transient time technique. Relative concentrations of aluminium atoms and ions as well as their distribution on velocities in the flow are measured. Determined is also the temperature and velocity of aluminium atoms. It is ascertained that within the range of used energy densities of 0.45 to 1.0 J/cm² extraction of materials can be made in three regimes, namely: the ablation, the plasma and mixed ones, intertransitions between them being of a cyclic character. |
| format |
Article |
| author |
Baschenko, S.M. Gochelashvili, K.S. Zakirov, R.M. Klimov, V.I. Mikhkelsoo, V.T. Prokhorov, O.M. |
| spellingShingle |
Baschenko, S.M. Gochelashvili, K.S. Zakirov, R.M. Klimov, V.I. Mikhkelsoo, V.T. Prokhorov, O.M. Investigation of ArF* excimer laser VUV radiation action on sapphire Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Baschenko, S.M. Gochelashvili, K.S. Zakirov, R.M. Klimov, V.I. Mikhkelsoo, V.T. Prokhorov, O.M. |
| author_sort |
Baschenko, S.M. |
| title |
Investigation of ArF* excimer laser VUV radiation action on sapphire |
| title_short |
Investigation of ArF* excimer laser VUV radiation action on sapphire |
| title_full |
Investigation of ArF* excimer laser VUV radiation action on sapphire |
| title_fullStr |
Investigation of ArF* excimer laser VUV radiation action on sapphire |
| title_full_unstemmed |
Investigation of ArF* excimer laser VUV radiation action on sapphire |
| title_sort |
investigation of arf* excimer laser vuv radiation action on sapphire |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2001 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/119330 |
| citation_txt |
Investigation of ArF* excimer laser VUV radiation action on sapphire / S.M. Baschenko, K.S. Gochelashvili, R.M. Zakirov, V.I. Klimov, V.T. Mikhkelsoo, O.M. Prokhorov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 290-297. — Бібліогр.: 14 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:34:18Z |
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2023-10-18T20:34:18Z |
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