Experimental investigations and computer modeling of the photochemical processes in Ag-As₂S₃ structures using surface plasmon resonance spectroscopy

Surface plasmon resonance (SPR) was first applied for investigation of the initial stage kinetics of the chemical processes in inorganic resist based on thin-film Ag-As₂S₃ structure. This method enabled to measure optical constants for the super-thin layers (from 0.2 up to 50 nm) and to study the ch...

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Бібліографічні деталі
Дата:2001
Автори: Chegel’, V.I., Shirshov, Yu.M., Kostyukevich, S.O., Shepeliavy, P.E., Chegel', Yu.V.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2001
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/119333
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Experimental investigations and computer modeling of the photochemical processes in Ag-As₂S₃ structures using surface plasmon resonance spectroscopy / V.I. Chegel’, Yu.M. Shirshov, S.O. Kostyukevich, P.E. Shepeliavy, Yu.V. Chegel’ // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 301-308. — Бібліогр.: 17 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1193332017-06-07T03:04:13Z Experimental investigations and computer modeling of the photochemical processes in Ag-As₂S₃ structures using surface plasmon resonance spectroscopy Chegel’, V.I. Shirshov, Yu.M. Kostyukevich, S.O. Shepeliavy, P.E. Chegel', Yu.V. Surface plasmon resonance (SPR) was first applied for investigation of the initial stage kinetics of the chemical processes in inorganic resist based on thin-film Ag-As₂S₃ structure. This method enabled to measure optical constants for the super-thin layers (from 0.2 up to 50 nm) and to study the changes in structure and thickness of the films after their exposure with different doses of UV radiation. Computer matching of the experimentally obtained SPR curves enabled to justify the assumption concerning the presence of a thin (close to 0.7-1 nm) intermediate layer with the parameters similar to Ag₂S, which is created during formation of the Ag-As₂S₃ structure, and also estimate its evolution in the course of layers interaction. 2001 Article Experimental investigations and computer modeling of the photochemical processes in Ag-As₂S₃ structures using surface plasmon resonance spectroscopy / V.I. Chegel’, Yu.M. Shirshov, S.O. Kostyukevich, P.E. Shepeliavy, Yu.V. Chegel’ // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 301-308. — Бібліогр.: 17 назв. — англ. 1560-8034 PACS: 68.55; 73.50; 78.66; 81.15 http://dspace.nbuv.gov.ua/handle/123456789/119333 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Surface plasmon resonance (SPR) was first applied for investigation of the initial stage kinetics of the chemical processes in inorganic resist based on thin-film Ag-As₂S₃ structure. This method enabled to measure optical constants for the super-thin layers (from 0.2 up to 50 nm) and to study the changes in structure and thickness of the films after their exposure with different doses of UV radiation. Computer matching of the experimentally obtained SPR curves enabled to justify the assumption concerning the presence of a thin (close to 0.7-1 nm) intermediate layer with the parameters similar to Ag₂S, which is created during formation of the Ag-As₂S₃ structure, and also estimate its evolution in the course of layers interaction.
format Article
author Chegel’, V.I.
Shirshov, Yu.M.
Kostyukevich, S.O.
Shepeliavy, P.E.
Chegel', Yu.V.
spellingShingle Chegel’, V.I.
Shirshov, Yu.M.
Kostyukevich, S.O.
Shepeliavy, P.E.
Chegel', Yu.V.
Experimental investigations and computer modeling of the photochemical processes in Ag-As₂S₃ structures using surface plasmon resonance spectroscopy
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Chegel’, V.I.
Shirshov, Yu.M.
Kostyukevich, S.O.
Shepeliavy, P.E.
Chegel', Yu.V.
author_sort Chegel’, V.I.
title Experimental investigations and computer modeling of the photochemical processes in Ag-As₂S₃ structures using surface plasmon resonance spectroscopy
title_short Experimental investigations and computer modeling of the photochemical processes in Ag-As₂S₃ structures using surface plasmon resonance spectroscopy
title_full Experimental investigations and computer modeling of the photochemical processes in Ag-As₂S₃ structures using surface plasmon resonance spectroscopy
title_fullStr Experimental investigations and computer modeling of the photochemical processes in Ag-As₂S₃ structures using surface plasmon resonance spectroscopy
title_full_unstemmed Experimental investigations and computer modeling of the photochemical processes in Ag-As₂S₃ structures using surface plasmon resonance spectroscopy
title_sort experimental investigations and computer modeling of the photochemical processes in ag-as₂s₃ structures using surface plasmon resonance spectroscopy
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2001
url http://dspace.nbuv.gov.ua/handle/123456789/119333
citation_txt Experimental investigations and computer modeling of the photochemical processes in Ag-As₂S₃ structures using surface plasmon resonance spectroscopy / V.I. Chegel’, Yu.M. Shirshov, S.O. Kostyukevich, P.E. Shepeliavy, Yu.V. Chegel’ // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 301-308. — Бібліогр.: 17 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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AT shepeliavype experimentalinvestigationsandcomputermodelingofthephotochemicalprocessesinagas2s3structuresusingsurfaceplasmonresonancespectroscopy
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first_indexed 2023-10-18T20:34:19Z
last_indexed 2023-10-18T20:34:19Z
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