Hereditary functional individuality of semiconductor sensors

By geometrisation of the natural and impurity bands of photocurrent spectrum of semiconductor sensors in the parameter space it is shown that individual features in their structures are technologically inherited. In analysis of the natural and impurity photocurrent bands the universal differential-g...

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Збережено в:
Бібліографічні деталі
Дата:2015
Автори: Migal, V.P., But, A.V., Migal, G.V., Klymenko, I.A.
Формат: Стаття
Мова:English
Опубліковано: НТК «Інститут монокристалів» НАН України 2015
Назва видання:Functional Materials
Теми:
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/119556
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Hereditary functional individuality of semiconductor sensors / V.P. Migal, A.V. But, G.V. Migal, I.A. Klymenko // Functional Materials. — 2015. — Т. 22, № 3. — С. 387-391. — Бібліогр.: 16 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1195562017-06-08T03:05:11Z Hereditary functional individuality of semiconductor sensors Migal, V.P. But, A.V. Migal, G.V. Klymenko, I.A. Devices and instruments By geometrisation of the natural and impurity bands of photocurrent spectrum of semiconductor sensors in the parameter space it is shown that individual features in their structures are technologically inherited. In analysis of the natural and impurity photocurrent bands the universal differential-geometric parameters and indicators of integrative energy balance of photo-induced processes are applied. To analyze the structure of the photosensitivity bands the matrix of balance indicators is proposed. 2015 Article Hereditary functional individuality of semiconductor sensors / V.P. Migal, A.V. But, G.V. Migal, I.A. Klymenko // Functional Materials. — 2015. — Т. 22, № 3. — С. 387-391. — Бібліогр.: 16 назв. — англ. 1027-5495 DOI: http://dx.doi.org/10.15407/fm22.03.387 http://dspace.nbuv.gov.ua/handle/123456789/119556 en Functional Materials НТК «Інститут монокристалів» НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
topic Devices and instruments
Devices and instruments
spellingShingle Devices and instruments
Devices and instruments
Migal, V.P.
But, A.V.
Migal, G.V.
Klymenko, I.A.
Hereditary functional individuality of semiconductor sensors
Functional Materials
description By geometrisation of the natural and impurity bands of photocurrent spectrum of semiconductor sensors in the parameter space it is shown that individual features in their structures are technologically inherited. In analysis of the natural and impurity photocurrent bands the universal differential-geometric parameters and indicators of integrative energy balance of photo-induced processes are applied. To analyze the structure of the photosensitivity bands the matrix of balance indicators is proposed.
format Article
author Migal, V.P.
But, A.V.
Migal, G.V.
Klymenko, I.A.
author_facet Migal, V.P.
But, A.V.
Migal, G.V.
Klymenko, I.A.
author_sort Migal, V.P.
title Hereditary functional individuality of semiconductor sensors
title_short Hereditary functional individuality of semiconductor sensors
title_full Hereditary functional individuality of semiconductor sensors
title_fullStr Hereditary functional individuality of semiconductor sensors
title_full_unstemmed Hereditary functional individuality of semiconductor sensors
title_sort hereditary functional individuality of semiconductor sensors
publisher НТК «Інститут монокристалів» НАН України
publishDate 2015
topic_facet Devices and instruments
url http://dspace.nbuv.gov.ua/handle/123456789/119556
citation_txt Hereditary functional individuality of semiconductor sensors / V.P. Migal, A.V. But, G.V. Migal, I.A. Klymenko // Functional Materials. — 2015. — Т. 22, № 3. — С. 387-391. — Бібліогр.: 16 назв. — англ.
series Functional Materials
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first_indexed 2023-10-18T20:34:51Z
last_indexed 2023-10-18T20:34:51Z
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