2025-02-23T07:06:46-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-119565%22&qt=morelikethis&rows=5
2025-02-23T07:06:46-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-119565%22&qt=morelikethis&rows=5
2025-02-23T07:06:46-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T07:06:46-05:00 DEBUG: Deserialized SOLR response
Instability of homogeneous composition of highly strained quantum wells in heterostructures GaAs/InxGa₁₋xAs/GaAs

Instability of homogeneous composition of highly strained quantum wells in heterostructures GaAs/InxGa₁₋xAs/GaAs

InxGa₁-xAs QW-layers embedded in GaAs matrix have been characterized by photoluminescence (PL). The relation between the PL parameters and mismatch of the lattice parameters of the layer and matrix was established. In highly strained layers several PL bands were observed instead one band. This is pr...

Full description

Saved in:
Bibliographic Details
Main Authors: Klimovskaya, A.I., Grigor’ev, N.N., Gule, E.G., Dryha, Yu.A., Litovchenko, V.G.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/119565
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:InxGa₁-xAs QW-layers embedded in GaAs matrix have been characterized by photoluminescence (PL). The relation between the PL parameters and mismatch of the lattice parameters of the layer and matrix was established. In highly strained layers several PL bands were observed instead one band. This is probably a result of alternating content of In raised only in highly strained layers.

Similar Items