Effect of temperature and pressure to pinning centers in bulk MgB₂ under high pressure
The MgB₂-based samples were synthesized at 2 GPa at 800 and 1050 °C for 1 hour with and without Ti and SiC. X-ray, SEM and Auger structural studies showed that with increasing of manufacturing temperature grain boundary pinning transforms into point pinning, which is well correlated with the transfo...
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| Видавець: | Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
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| Дата: | 2014 |
| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2014
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| Назва видання: | Физика низких температур |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119607 |
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| Цитувати: | Effect of temperature and pressure to pinning centers in bulk MgB₂ under high pressure / A. Kozyrev // Физика низких температур. — 2014. — Т. 40, № 8. — С. 964-967. — Бібліогр.: 10 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | The MgB₂-based samples were synthesized at 2 GPa at 800 and 1050 °C for 1 hour with and without Ti and SiC. X-ray, SEM and Auger structural studies showed that with increasing of manufacturing temperature grain boundary pinning transforms into point pinning, which is well correlated with the transformation of discontinuous oxygen enriched layers into separately located Mg–B–O inclusions in MgB₂. Ti and SiC additions can influence the oxygen and boron distribution, but cannot change the type of pinning at relatively low temperatures. |
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