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Josephson effect and Andreev reflection in Ba₁₋xNaxFe₂As₂ (x = 0.25 and 0.35) point contacts

I(V) characteristics and their first derivatives of ScS and ScN-type (S is superconductor, c is constriction, N is normal metal) point contacts (PCs) based on Ba₁₋xNaxFe₂As₂ (x = 0.25 and 0.35) were studied. ScS-type PCs with S = Nb,Ta, and Pb show Josephson-like resistively shunted I(V) curves wi...

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Main Authors: Fisun, V.V., Balkashin, O.P., Kvitnitskaya, O.E., Korovkin, I.A., Gamayunova, N.V., Aswartham, S., Wurmehl, S., Naidyuk, Yu.G
Format: Article
Language:English
Published: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2014
Series:Физика низких температур
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Online Access:http://dspace.nbuv.gov.ua/handle/123456789/119675
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spelling irk-123456789-1196752017-06-09T03:04:37Z Josephson effect and Andreev reflection in Ba₁₋xNaxFe₂As₂ (x = 0.25 and 0.35) point contacts Fisun, V.V. Balkashin, O.P. Kvitnitskaya, O.E. Korovkin, I.A. Gamayunova, N.V. Aswartham, S. Wurmehl, S. Naidyuk, Yu.G III Международный семинар по микроконтактной спектроскопии I(V) characteristics and their first derivatives of ScS and ScN-type (S is superconductor, c is constriction, N is normal metal) point contacts (PCs) based on Ba₁₋xNaxFe₂As₂ (x = 0.25 and 0.35) were studied. ScS-type PCs with S = Nb,Ta, and Pb show Josephson-like resistively shunted I(V) curves with microwave induced Shapiro steps which satisfy relation 2eV = ω. The IcRN product (Ic is critical current, RN is normal state PC resistance) in these PCs is found to be up to 1.2 mV. All this data with the observed dependence of the Ic on the microwave power of ScS PCs with Pb counterelectrode indicates the presence of the singlet s-wave type pairing in Ba₁₋xNaxFe₂As₂. From the dV/dI(V) curves of ScN-type PCs demonstrating Andreev-reflection like features, the superconducting gap ∆ ratio 2∆/kBTc = 3.6 ± 1 for the compound with x = 0.35 was evaluated. Analysis of these dV/dI(V) at high biases V, that is well above ∆, testifies transition to the thermal regime in PCs with a voltage increase. 2014 Article Josephson effect and Andreev reflection in Ba₁₋xNaxFe₂As₂ (x = 0.25 and 0.35) point contacts / V.V. Fisun, O.P. Balkashin, O.E. Kvitnitskaya, I.A. Korovkin, N.V. Gamayunova, S. Aswartham, S. Wurmehl, Yu.G. Naidyuk // Физика низких температур. — 2014. — Т. 40, № 10. — С. 1175-1181. — Бібліогр.: 24 назв. — англ. 0132-6414 PACS 74.50.+r, 74.70.Dd, 74.45.+c http://dspace.nbuv.gov.ua/handle/123456789/119675 en Физика низких температур Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
topic III Международный семинар по микроконтактной спектроскопии
III Международный семинар по микроконтактной спектроскопии
spellingShingle III Международный семинар по микроконтактной спектроскопии
III Международный семинар по микроконтактной спектроскопии
Fisun, V.V.
Balkashin, O.P.
Kvitnitskaya, O.E.
Korovkin, I.A.
Gamayunova, N.V.
Aswartham, S.
Wurmehl, S.
Naidyuk, Yu.G
Josephson effect and Andreev reflection in Ba₁₋xNaxFe₂As₂ (x = 0.25 and 0.35) point contacts
Физика низких температур
description I(V) characteristics and their first derivatives of ScS and ScN-type (S is superconductor, c is constriction, N is normal metal) point contacts (PCs) based on Ba₁₋xNaxFe₂As₂ (x = 0.25 and 0.35) were studied. ScS-type PCs with S = Nb,Ta, and Pb show Josephson-like resistively shunted I(V) curves with microwave induced Shapiro steps which satisfy relation 2eV = ω. The IcRN product (Ic is critical current, RN is normal state PC resistance) in these PCs is found to be up to 1.2 mV. All this data with the observed dependence of the Ic on the microwave power of ScS PCs with Pb counterelectrode indicates the presence of the singlet s-wave type pairing in Ba₁₋xNaxFe₂As₂. From the dV/dI(V) curves of ScN-type PCs demonstrating Andreev-reflection like features, the superconducting gap ∆ ratio 2∆/kBTc = 3.6 ± 1 for the compound with x = 0.35 was evaluated. Analysis of these dV/dI(V) at high biases V, that is well above ∆, testifies transition to the thermal regime in PCs with a voltage increase.
format Article
author Fisun, V.V.
Balkashin, O.P.
Kvitnitskaya, O.E.
Korovkin, I.A.
Gamayunova, N.V.
Aswartham, S.
Wurmehl, S.
Naidyuk, Yu.G
author_facet Fisun, V.V.
Balkashin, O.P.
Kvitnitskaya, O.E.
Korovkin, I.A.
Gamayunova, N.V.
Aswartham, S.
Wurmehl, S.
Naidyuk, Yu.G
author_sort Fisun, V.V.
title Josephson effect and Andreev reflection in Ba₁₋xNaxFe₂As₂ (x = 0.25 and 0.35) point contacts
title_short Josephson effect and Andreev reflection in Ba₁₋xNaxFe₂As₂ (x = 0.25 and 0.35) point contacts
title_full Josephson effect and Andreev reflection in Ba₁₋xNaxFe₂As₂ (x = 0.25 and 0.35) point contacts
title_fullStr Josephson effect and Andreev reflection in Ba₁₋xNaxFe₂As₂ (x = 0.25 and 0.35) point contacts
title_full_unstemmed Josephson effect and Andreev reflection in Ba₁₋xNaxFe₂As₂ (x = 0.25 and 0.35) point contacts
title_sort josephson effect and andreev reflection in ba₁₋xnaxfe₂as₂ (x = 0.25 and 0.35) point contacts
publisher Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
publishDate 2014
topic_facet III Международный семинар по микроконтактной спектроскопии
url http://dspace.nbuv.gov.ua/handle/123456789/119675
citation_txt Josephson effect and Andreev reflection in Ba₁₋xNaxFe₂As₂ (x = 0.25 and 0.35) point contacts / V.V. Fisun, O.P. Balkashin, O.E. Kvitnitskaya, I.A. Korovkin, N.V. Gamayunova, S. Aswartham, S. Wurmehl, Yu.G. Naidyuk // Физика низких температур. — 2014. — Т. 40, № 10. — С. 1175-1181. — Бібліогр.: 24 назв. — англ.
series Физика низких температур
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first_indexed 2023-10-18T20:35:09Z
last_indexed 2023-10-18T20:35:09Z
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