Investigation of the photoelastic effect in si at high values of the absorptivity
The birefrigence effect induced by uniaxial elastic deformation has been investigated in monocrystalline Si using theoretical and experimental technigues. To improve a measuring system sensitivity in the range of band absorption, polarization modulation of reffected emission was used. Deformation ch...
Збережено в:
| Дата: | 1999 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119860 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Investigation of the photoelastic effect in si at high values of the absorptivity / I.I. Boiko, Ye.F. Venger, E.V. Nikitenko, B.K. Serdega // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 54-58. — Бібліогр.: 8 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-119860 |
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dspace |
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irk-123456789-1198602017-06-11T03:02:57Z Investigation of the photoelastic effect in si at high values of the absorptivity Boiko, I.I. Venger, Ye.F. Nikitenko, E.V. Serdega, B.K. The birefrigence effect induced by uniaxial elastic deformation has been investigated in monocrystalline Si using theoretical and experimental technigues. To improve a measuring system sensitivity in the range of band absorption, polarization modulation of reffected emission was used. Deformation characteristics of this effect has been measured. The main results obtained for probing light wavelengths from the range of crystal transparency are in a good accordance with conclusions of previons studies. In the range of strong absorption, a considerable change of effect characteristic shapes was found, and their satisfactory accordance with results of theoretical estimations was also ascertained. 1999 Article Investigation of the photoelastic effect in si at high values of the absorptivity / I.I. Boiko, Ye.F. Venger, E.V. Nikitenko, B.K. Serdega // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 54-58. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS 78.20.C http://dspace.nbuv.gov.ua/handle/123456789/119860 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The birefrigence effect induced by uniaxial elastic deformation has been investigated in monocrystalline Si using theoretical and experimental technigues. To improve a measuring system sensitivity in the range of band absorption, polarization modulation of reffected emission was used. Deformation characteristics of this effect has been measured. The main results obtained for probing light wavelengths from the range of crystal transparency are in a good accordance with conclusions of previons studies. In the range of strong absorption, a considerable change of effect characteristic shapes was found, and their satisfactory accordance with results of theoretical estimations was also ascertained. |
| format |
Article |
| author |
Boiko, I.I. Venger, Ye.F. Nikitenko, E.V. Serdega, B.K. |
| spellingShingle |
Boiko, I.I. Venger, Ye.F. Nikitenko, E.V. Serdega, B.K. Investigation of the photoelastic effect in si at high values of the absorptivity Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Boiko, I.I. Venger, Ye.F. Nikitenko, E.V. Serdega, B.K. |
| author_sort |
Boiko, I.I. |
| title |
Investigation of the photoelastic effect in si at high values of the absorptivity |
| title_short |
Investigation of the photoelastic effect in si at high values of the absorptivity |
| title_full |
Investigation of the photoelastic effect in si at high values of the absorptivity |
| title_fullStr |
Investigation of the photoelastic effect in si at high values of the absorptivity |
| title_full_unstemmed |
Investigation of the photoelastic effect in si at high values of the absorptivity |
| title_sort |
investigation of the photoelastic effect in si at high values of the absorptivity |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
1999 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/119860 |
| citation_txt |
Investigation of the photoelastic effect in si at high values of the absorptivity / I.I. Boiko, Ye.F. Venger, E.V. Nikitenko, B.K. Serdega // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 54-58. — Бібліогр.: 8 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:35:36Z |
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