Effect of emitter proprties on the conversion efficiency of silicon solar cells
The effect of donor concentration distribution N(x) in the n⁺-emitter on the conversion efficiency h of silicon n⁺-p-p⁺ solar cells is studied theoretically. Shockley-Reed-Hall recombination in the emitter is taken into consideration together with band-to-band Auger recombination. The calculation is...
Збережено в:
| Дата: | 1999 |
|---|---|
| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119874 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Effect of emitter proprties on the conversion efficiency of silicon solar cells / A.P. Gorban, V.P. Kostylyov, A.V. Sachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 26-31. — Бібліогр.: 13 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-119874 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1198742017-06-11T03:02:33Z Effect of emitter proprties on the conversion efficiency of silicon solar cells Gorban, A.P. Kostylyov, V.P. Sachenko, A.V. The effect of donor concentration distribution N(x) in the n⁺-emitter on the conversion efficiency h of silicon n⁺-p-p⁺ solar cells is studied theoretically. Shockley-Reed-Hall recombination in the emitter is taken into consideration together with band-to-band Auger recombination. The calculation is performed in the approximation when in the region with changing concentration a small part of generated electron-hole pairs recombines. It is shown that, in general, the correlation between h and p-n - junction depth is absent. 1999 Article Effect of emitter proprties on the conversion efficiency of silicon solar cells / A.P. Gorban, V.P. Kostylyov, A.V. Sachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 26-31. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS 84.60.J, 72.20.J http://dspace.nbuv.gov.ua/handle/123456789/119874 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The effect of donor concentration distribution N(x) in the n⁺-emitter on the conversion efficiency h of silicon n⁺-p-p⁺ solar cells is studied theoretically. Shockley-Reed-Hall recombination in the emitter is taken into consideration together with band-to-band Auger recombination. The calculation is performed in the approximation when in the region with changing concentration a small part of generated electron-hole pairs recombines. It is shown that, in general, the correlation between h and p-n - junction depth is absent. |
| format |
Article |
| author |
Gorban, A.P. Kostylyov, V.P. Sachenko, A.V. |
| spellingShingle |
Gorban, A.P. Kostylyov, V.P. Sachenko, A.V. Effect of emitter proprties on the conversion efficiency of silicon solar cells Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Gorban, A.P. Kostylyov, V.P. Sachenko, A.V. |
| author_sort |
Gorban, A.P. |
| title |
Effect of emitter proprties on the conversion efficiency of silicon solar cells |
| title_short |
Effect of emitter proprties on the conversion efficiency of silicon solar cells |
| title_full |
Effect of emitter proprties on the conversion efficiency of silicon solar cells |
| title_fullStr |
Effect of emitter proprties on the conversion efficiency of silicon solar cells |
| title_full_unstemmed |
Effect of emitter proprties on the conversion efficiency of silicon solar cells |
| title_sort |
effect of emitter proprties on the conversion efficiency of silicon solar cells |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
1999 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/119874 |
| citation_txt |
Effect of emitter proprties on the conversion efficiency of silicon solar cells / A.P. Gorban, V.P. Kostylyov, A.V. Sachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 26-31. — Бібліогр.: 13 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT gorbanap effectofemitterproprtiesontheconversionefficiencyofsiliconsolarcells AT kostylyovvp effectofemitterproprtiesontheconversionefficiencyofsiliconsolarcells AT sachenkoav effectofemitterproprtiesontheconversionefficiencyofsiliconsolarcells |
| first_indexed |
2023-10-18T20:35:38Z |
| last_indexed |
2023-10-18T20:35:38Z |
| _version_ |
1796150607277457408 |