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Review of a monographs
In their monograph the authors have systematized and generalized the results of numerous theoretical, as well as experimental, investigations of interactions between phases at the metal−InP (GaAs) interfaces and degradation mechanisms in indium phosphide and gallium arsenide Schottky barrier device...
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| Main Author: | |
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| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Subjects: | |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/119878 |
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