The increase of crystal growing rate without damaging the smoothness of interface border
This paper provides literature data on non-stationary crystallization of binary melt, making it possible to put forward a hypothesis about a fluctuation mechanism of the structure transitions on the interface surface. Another argument for this hypothesis is the authors' observation results of t...
Збережено в:
| Видавець: | НТК «Інститут монокристалів» НАН України |
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| Дата: | 2013 |
| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2013
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| Назва видання: | Functional Materials |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119910 |
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| Цитувати: | The increase of crystal growing rate without damaging the smoothness of interface border / V.N. Kanishchev // Functional Materials. — 2013. — Т. 20, № 1. — С. 123-126. — Бібліогр.: 7 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | This paper provides literature data on non-stationary crystallization of binary melt, making it possible to put forward a hypothesis about a fluctuation mechanism of the structure transitions on the interface surface. Another argument for this hypothesis is the authors' observation results of the front crystallization at growing a sapphire crystal by horizontal directed crystallization. It has been suggested that it will be possible to grow crystals with a smooth interface border faster at a variable rate of crystallization rather than at a constant one. |
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