The increase of crystal growing rate without damaging the smoothness of interface border
This paper provides literature data on non-stationary crystallization of binary melt, making it possible to put forward a hypothesis about a fluctuation mechanism of the structure transitions on the interface surface. Another argument for this hypothesis is the authors' observation results of t...
Збережено в:
| Видавець: | НТК «Інститут монокристалів» НАН України |
|---|---|
| Дата: | 2013 |
| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2013
|
| Назва видання: | Functional Materials |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119910 |
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| Цитувати: | The increase of crystal growing rate without damaging the smoothness of interface border / V.N. Kanishchev // Functional Materials. — 2013. — Т. 20, № 1. — С. 123-126. — Бібліогр.: 7 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-119910 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1199102017-06-11T03:03:35Z The increase of crystal growing rate without damaging the smoothness of interface border Kanishchev, V.N. Technology This paper provides literature data on non-stationary crystallization of binary melt, making it possible to put forward a hypothesis about a fluctuation mechanism of the structure transitions on the interface surface. Another argument for this hypothesis is the authors' observation results of the front crystallization at growing a sapphire crystal by horizontal directed crystallization. It has been suggested that it will be possible to grow crystals with a smooth interface border faster at a variable rate of crystallization rather than at a constant one. 2013 Article The increase of crystal growing rate without damaging the smoothness of interface border / V.N. Kanishchev // Functional Materials. — 2013. — Т. 20, № 1. — С. 123-126. — Бібліогр.: 7 назв. — англ. 1027-5495 DOI: dx.doi.org/10.15407/fm20.01.123 http://dspace.nbuv.gov.ua/handle/123456789/119910 en Functional Materials НТК «Інститут монокристалів» НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| topic |
Technology Technology |
| spellingShingle |
Technology Technology Kanishchev, V.N. The increase of crystal growing rate without damaging the smoothness of interface border Functional Materials |
| description |
This paper provides literature data on non-stationary crystallization of binary melt, making it possible to put forward a hypothesis about a fluctuation mechanism of the structure transitions on the interface surface. Another argument for this hypothesis is the authors' observation results of the front crystallization at growing a sapphire crystal by horizontal directed crystallization. It has been suggested that it will be possible to grow crystals with a smooth interface border faster at a variable rate of crystallization rather than at a constant one. |
| format |
Article |
| author |
Kanishchev, V.N. |
| author_facet |
Kanishchev, V.N. |
| author_sort |
Kanishchev, V.N. |
| title |
The increase of crystal growing rate without damaging the smoothness of interface border |
| title_short |
The increase of crystal growing rate without damaging the smoothness of interface border |
| title_full |
The increase of crystal growing rate without damaging the smoothness of interface border |
| title_fullStr |
The increase of crystal growing rate without damaging the smoothness of interface border |
| title_full_unstemmed |
The increase of crystal growing rate without damaging the smoothness of interface border |
| title_sort |
increase of crystal growing rate without damaging the smoothness of interface border |
| publisher |
НТК «Інститут монокристалів» НАН України |
| publishDate |
2013 |
| topic_facet |
Technology |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/119910 |
| citation_txt |
The increase of crystal growing rate without damaging the smoothness of interface border / V.N. Kanishchev // Functional Materials. — 2013. — Т. 20, № 1. — С. 123-126. — Бібліогр.: 7 назв. — англ. |
| series |
Functional Materials |
| work_keys_str_mv |
AT kanishchevvn theincreaseofcrystalgrowingratewithoutdamagingthesmoothnessofinterfaceborder AT kanishchevvn increaseofcrystalgrowingratewithoutdamagingthesmoothnessofinterfaceborder |
| first_indexed |
2023-10-18T20:35:44Z |
| last_indexed |
2023-10-18T20:35:44Z |
| _version_ |
1796150610875121664 |