Spin-3/2 Ising model on a two-layer Bethe lattice with FM/AFM interactions
Two-layer Bethe lattice whose lattice sites are occupied with spin-3/2 atoms is solved exactly by using the recursion relations in a pairwise approach for given coordination numbers q = 3, 4 and 6 with equal external magnetic fields acting on the layers. The ferromagnetic (FM) and antiferromagneti...
Збережено в:
Дата: | 2009 |
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Автори: | , |
Формат: | Стаття |
Мова: | English |
Опубліковано: |
Інститут фізики конденсованих систем НАН України
2009
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Назва видання: | Condensed Matter Physics |
Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119967 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Цитувати: | Spin-3/2 Ising model on a two-layer Bethe lattice with FM/AFM interactions / E. Albayrak, A. Yigit // Condensed Matter Physics. — 2009. — Т. 12, № 2. — С. 167-181. — Бібліогр.: 28 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of UkraineРезюме: | Two-layer Bethe lattice whose lattice sites are occupied with spin-3/2 atoms is solved exactly by using the
recursion relations in a pairwise approach for given coordination numbers q = 3, 4 and 6 with equal external
magnetic fields acting on the layers. The ferromagnetic (FM) and antiferromagnetic (AFM) interactions for the
spins of the upper and lower layers, respectively, and either FM or AFM type interactions between the adjacent
spins of the layers are assumed. The phase diagrams of the model are studied on different planes for given
system parameters by obtaining the ground state (GS) phase diagrams and the thermal variations of the order
parameters and the response functions, i. e. the susceptibility and the specific heat, in detail. It was found that
the model presents both second- and first-order phase transitions. The reentrant behavior is seen when the
model presents two N´eel temperatures for higher q values. The existence of the tricritical point and critical end
points is also confirmed. |
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