Electric properties of the interface quantum dot — matrix
A theoretical research is presented concerning the potential distribution and electric field intensity in the InAs/GaAs nanoheterosystem with InAs QDs within the framework of self-consistent electron-deformation model. It is shown that at the strained border between a quantum dot and matrix there...
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Дата: | 2009 |
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Автори: | , |
Формат: | Стаття |
Мова: | English |
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Інститут фізики конденсованих систем НАН України
2009
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Назва видання: | Condensed Matter Physics |
Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119989 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Цитувати: | Electric properties of the interface quantum dot — matrix / R.M. Peleshchak, I.Ya. Bachynsky // Condensed Matter Physics. — 2009. — Т. 12, № 2. — С. 215-223. — Бібліогр.: 16 назв. — англ. |
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irk-123456789-1199892017-06-11T03:04:26Z Electric properties of the interface quantum dot — matrix Peleshchak, R.M. Bachynsky, I.Ya. A theoretical research is presented concerning the potential distribution and electric field intensity in the InAs/GaAs nanoheterosystem with InAs QDs within the framework of self-consistent electron-deformation model. It is shown that at the strained border between a quantum dot and matrix there is a double electric layer, that is n⁺ - n junction. У межах моделi самоузгодженого електрон-деформацiйного зв’язку, теоретично дослiджено розподiл потенцiалу та напруженостi електричного поля в напруженiй наногетеросистемi InAs/GaAs з квантовими точкам InAs. Показано, що на напруженiй межi квантова точка – матриця виникає подвiйний електричний шар, тобто n⁺ - n перехiд. 2009 Article Electric properties of the interface quantum dot — matrix / R.M. Peleshchak, I.Ya. Bachynsky // Condensed Matter Physics. — 2009. — Т. 12, № 2. — С. 215-223. — Бібліогр.: 16 назв. — англ. 1607-324X PACS: 68.65.Hb, 73.21.La, 73.63.Kv DOI:10.5488/CMP.12.2.215 http://dspace.nbuv.gov.ua/handle/123456789/119989 en Condensed Matter Physics Інститут фізики конденсованих систем НАН України |
institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
collection |
DSpace DC |
language |
English |
description |
A theoretical research is presented concerning the potential distribution and electric field intensity in the
InAs/GaAs nanoheterosystem with InAs QDs within the framework of self-consistent electron-deformation
model. It is shown that at the strained border between a quantum dot and matrix there is a double electric
layer, that is n⁺ - n junction. |
format |
Article |
author |
Peleshchak, R.M. Bachynsky, I.Ya. |
spellingShingle |
Peleshchak, R.M. Bachynsky, I.Ya. Electric properties of the interface quantum dot — matrix Condensed Matter Physics |
author_facet |
Peleshchak, R.M. Bachynsky, I.Ya. |
author_sort |
Peleshchak, R.M. |
title |
Electric properties of the interface quantum dot — matrix |
title_short |
Electric properties of the interface quantum dot — matrix |
title_full |
Electric properties of the interface quantum dot — matrix |
title_fullStr |
Electric properties of the interface quantum dot — matrix |
title_full_unstemmed |
Electric properties of the interface quantum dot — matrix |
title_sort |
electric properties of the interface quantum dot — matrix |
publisher |
Інститут фізики конденсованих систем НАН України |
publishDate |
2009 |
url |
http://dspace.nbuv.gov.ua/handle/123456789/119989 |
citation_txt |
Electric properties of the interface quantum dot — matrix / R.M. Peleshchak, I.Ya. Bachynsky // Condensed Matter Physics. — 2009. — Т. 12, № 2. — С. 215-223. — Бібліогр.: 16 назв. — англ. |
series |
Condensed Matter Physics |
work_keys_str_mv |
AT peleshchakrm electricpropertiesoftheinterfacequantumdotmatrix AT bachynskyiya electricpropertiesoftheinterfacequantumdotmatrix |
first_indexed |
2023-10-18T20:35:58Z |
last_indexed |
2023-10-18T20:35:58Z |
_version_ |
1796150618935525376 |