Optical and scintillation properties of CsI:In crystals
The work is dedicated to study of optical and scintillation properties of CsI:In crystals. Using the Bridgeman method a concentration row of CsI:In single crystals was grown with the dopant content from 10⁻⁴ to 10⁻¹ mol. %. The segregation coefficient of In in CsI was estimated to be ~0.15. In...
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Дата: | 2013 |
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Автори: | , , , , , , |
Формат: | Стаття |
Мова: | English |
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НТК «Інститут монокристалів» НАН України
2013
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Назва видання: | Functional Materials |
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Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/120077 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Цитувати: | Optical and scintillation properties of CsI:In crystals / S. Gridin, N. Shiran, M. Moszynski, A. Belsky, A. Syntfeld-Kazuch, V. Tarasov, A. Gektin // Functional Materials. — 2013. — Т. 20, № 3. — С. 284-289. — Бібліогр.: 14 назв. — англ. |
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irk-123456789-1200772017-06-12T03:03:20Z Optical and scintillation properties of CsI:In crystals Gridin, S. Shiran, N. Moszynski, M. Belsky, A. Syntfeld-Kazuch, A. Tarasov, V. Gektin, A. Characterization and properties The work is dedicated to study of optical and scintillation properties of CsI:In crystals. Using the Bridgeman method a concentration row of CsI:In single crystals was grown with the dopant content from 10⁻⁴ to 10⁻¹ mol. %. The segregation coefficient of In in CsI was estimated to be ~0.15. In CsI:In luminescence spectra one symmetric band is observed, peaking around 545 nm, with FWHM of 0.46 eV. Under intracenter excitation 1.9 μ s exponential decay was observed. The light yield under gamma excitation of ¹³⁷Cs isotope (662 keV), measured with a shaping time of 10 μ s, was 27 000 photons/MeV. The radio-luminescence yield of CsI:In , measured by the current mode method, approached to that of CsI:Tl . Probably, this difference is connected with the presence of a stronger afterglow in CsI:In crystals. 2013 Article Optical and scintillation properties of CsI:In crystals / S. Gridin, N. Shiran, M. Moszynski, A. Belsky, A. Syntfeld-Kazuch, V. Tarasov, A. Gektin // Functional Materials. — 2013. — Т. 20, № 3. — С. 284-289. — Бібліогр.: 14 назв. — англ. 1027-5495 DOI: dx.doi.org/10.15407/fm20.03.284 http://dspace.nbuv.gov.ua/handle/123456789/120077 en Functional Materials НТК «Інститут монокристалів» НАН України |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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English |
topic |
Characterization and properties Characterization and properties |
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Characterization and properties Characterization and properties Gridin, S. Shiran, N. Moszynski, M. Belsky, A. Syntfeld-Kazuch, A. Tarasov, V. Gektin, A. Optical and scintillation properties of CsI:In crystals Functional Materials |
description |
The work is dedicated to study of optical and scintillation properties of CsI:In crystals. Using the Bridgeman method a concentration row of CsI:In single crystals was grown with the dopant content from 10⁻⁴ to 10⁻¹ mol. %. The segregation coefficient of In in CsI was estimated to be ~0.15. In CsI:In luminescence spectra one symmetric band is observed, peaking around 545 nm, with FWHM of 0.46 eV. Under intracenter excitation 1.9 μ s exponential decay was observed. The light yield under gamma excitation of ¹³⁷Cs isotope (662 keV), measured with a shaping time of 10 μ s, was 27 000 photons/MeV. The radio-luminescence yield of CsI:In , measured by the current mode method, approached to that of CsI:Tl . Probably, this difference is connected with the presence of a stronger afterglow in CsI:In crystals. |
format |
Article |
author |
Gridin, S. Shiran, N. Moszynski, M. Belsky, A. Syntfeld-Kazuch, A. Tarasov, V. Gektin, A. |
author_facet |
Gridin, S. Shiran, N. Moszynski, M. Belsky, A. Syntfeld-Kazuch, A. Tarasov, V. Gektin, A. |
author_sort |
Gridin, S. |
title |
Optical and scintillation properties of CsI:In crystals |
title_short |
Optical and scintillation properties of CsI:In crystals |
title_full |
Optical and scintillation properties of CsI:In crystals |
title_fullStr |
Optical and scintillation properties of CsI:In crystals |
title_full_unstemmed |
Optical and scintillation properties of CsI:In crystals |
title_sort |
optical and scintillation properties of csi:in crystals |
publisher |
НТК «Інститут монокристалів» НАН України |
publishDate |
2013 |
topic_facet |
Characterization and properties |
url |
http://dspace.nbuv.gov.ua/handle/123456789/120077 |
citation_txt |
Optical and scintillation properties of CsI:In crystals / S. Gridin, N. Shiran, M. Moszynski, A. Belsky, A. Syntfeld-Kazuch, V. Tarasov, A. Gektin // Functional Materials. — 2013. — Т. 20, № 3. — С. 284-289. — Бібліогр.: 14 назв. — англ. |
series |
Functional Materials |
work_keys_str_mv |
AT gridins opticalandscintillationpropertiesofcsiincrystals AT shirann opticalandscintillationpropertiesofcsiincrystals AT moszynskim opticalandscintillationpropertiesofcsiincrystals AT belskya opticalandscintillationpropertiesofcsiincrystals AT syntfeldkazucha opticalandscintillationpropertiesofcsiincrystals AT tarasovv opticalandscintillationpropertiesofcsiincrystals AT gektina opticalandscintillationpropertiesofcsiincrystals |
first_indexed |
2023-10-18T20:36:09Z |
last_indexed |
2023-10-18T20:36:09Z |
_version_ |
1796150629470568448 |