Effect of praseodymium doping on electroresistivity along c-axis in Y₁₋xPrxBa₂Cu₃O₇₋δ single crystals
In the present study influence of praseodymium doping on conductivity across (transverse) the basal plane of high-temperature superconducting Y₁₋xPrxBa₂Cu₃O₇₋δ single crystals is investigated. It is determined that increase of praseodymium doping leads to increased localization effects and implem...
Збережено в:
| Видавець: | НТК «Інститут монокристалів» НАН України |
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| Дата: | 2013 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2013
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| Назва видання: | Functional Materials |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/120111 |
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| Цитувати: | Effect of praseodymium doping on electroresistivity along c-axis in Y₁₋xPrxBa₂Cu₃O₇₋δ single crystals / R.V. Vovk, N.R. Vovk, A.V. Samoilov // Functional Materials. — 2013. — Т. 20, № 4. — С. 457-461. — Бібліогр.: 25 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | In the present study influence of praseodymium doping on conductivity across (transverse) the basal plane of high-temperature superconducting Y₁₋xPrxBa₂Cu₃O₇₋δ single crystals is investigated. It is determined that increase of praseodymium doping leads to increased localization effects and implementation of the metal – insulator transition Y₁₋xPrxBa₂Cu₃O₇₋δ, which always precedes the superconducting transition. The praseodymium concentration increase also leads to significant displacement of the point of the metal – insulator transition to the low temperature region. |
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