Ballistic spin filtering across the ferromagnetic-semiconductor interface
The ballistic spin-filter effect from a ferromagnetic metal into a semiconductor has theoretically been studied with an intention of detecting the spin polarizability of density of states in FM layer at a higher energy level. The physical model for the ballistic spin filtering across the interface b...
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| Дата: | 2012 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики конденсованих систем НАН України
2012
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| Назва видання: | Condensed Matter Physics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/120156 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Ballistic spin filtering across the ferromagnetic-semiconductor interface / Y.H. Li // Condensed Matter Physics. — 2012. — Т. 15, № 1. — С. 13701: 1-7. — Бібліогр.: 18 назв. — англ. |
Репозитарії
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irk-123456789-1201562017-06-12T03:04:03Z Ballistic spin filtering across the ferromagnetic-semiconductor interface Li, Y.H. The ballistic spin-filter effect from a ferromagnetic metal into a semiconductor has theoretically been studied with an intention of detecting the spin polarizability of density of states in FM layer at a higher energy level. The physical model for the ballistic spin filtering across the interface between ferromagnetic metals and semiconductor superlattice is developed by exciting the spin polarized electrons into n-type AlAs/GaAs superlattice layer at a much higher energy level and then ballistically tunneling through the barrier into the ferromagnetic film. Since both the helicity-modulated and static photocurrent responses are experimentally measurable quantities, the physical quantity of interest, the relative asymmetry of spin-polarized tunneling conductance, could be extracted experimentally in a more straightforward way, as compared with previous models. The present physical model serves guidance for studying spin detection with advanced performance in the future. Ефект балiстичного спiнового фiльтрування з феромагнiтного металу в напiвпровiдник теоретично дослiджено з намiром виявлення спiнової поляризованостi густини станiв у феромагнiтному шарi при вищому енергетичному рiвнi. Розвинуто фiзичну модель для балiстичного спiнового фiльтрування через мiжфазову границю мiж феромагнiтними металами i напiвпровдниковою суперграткою, в основi якої є збудження спiнополяризаваних електронiв у шарi AlAs/GaAs супергратки n-типу при набагато вищому енер-гетичному рiвнi з подальшим балiстичним тунелюванням через бар’єр у феромагнiтну плiвку. Оскiльки обидва спiрально-модульований i статичний фотовiдгуки є експериментально вимiрювальними величинами, фiзична величина, яка нас цiкавить, вiдносна асиметрiя спiнополяризованої тунельної провiдностi, могла б бути виокремлена експериментально в бiльш прямий спосiб порiвняно з попереднiми моделями. Дана фiзична модель зорiєнтована на вивчення спiнового детектування з високою продуктивнiстю в майбутньому. 2012 Article Ballistic spin filtering across the ferromagnetic-semiconductor interface / Y.H. Li // Condensed Matter Physics. — 2012. — Т. 15, № 1. — С. 13701: 1-7. — Бібліогр.: 18 назв. — англ. 1607-324X PACS: 72.25.Dc, 73.40.-c DOI:10.5488/CMP.15.13701 arXiv:1204.5826 http://dspace.nbuv.gov.ua/handle/123456789/120156 en Condensed Matter Physics Інститут фізики конденсованих систем НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The ballistic spin-filter effect from a ferromagnetic metal into a semiconductor has theoretically been studied with an intention of detecting the spin polarizability of density of states in FM layer at a higher energy level. The physical model for the ballistic spin filtering across the interface between ferromagnetic metals and semiconductor superlattice is developed by exciting the spin polarized electrons into n-type AlAs/GaAs superlattice layer at a much higher energy level and then ballistically tunneling through the barrier into the ferromagnetic film. Since both the helicity-modulated and static photocurrent responses are experimentally measurable quantities, the physical quantity of interest, the relative asymmetry of spin-polarized tunneling conductance, could be extracted experimentally in a more straightforward way, as compared with previous models. The present physical model serves guidance for studying spin detection with advanced performance in the future. |
| format |
Article |
| author |
Li, Y.H. |
| spellingShingle |
Li, Y.H. Ballistic spin filtering across the ferromagnetic-semiconductor interface Condensed Matter Physics |
| author_facet |
Li, Y.H. |
| author_sort |
Li, Y.H. |
| title |
Ballistic spin filtering across the ferromagnetic-semiconductor interface |
| title_short |
Ballistic spin filtering across the ferromagnetic-semiconductor interface |
| title_full |
Ballistic spin filtering across the ferromagnetic-semiconductor interface |
| title_fullStr |
Ballistic spin filtering across the ferromagnetic-semiconductor interface |
| title_full_unstemmed |
Ballistic spin filtering across the ferromagnetic-semiconductor interface |
| title_sort |
ballistic spin filtering across the ferromagnetic-semiconductor interface |
| publisher |
Інститут фізики конденсованих систем НАН України |
| publishDate |
2012 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/120156 |
| citation_txt |
Ballistic spin filtering across the ferromagnetic-semiconductor interface / Y.H. Li // Condensed Matter Physics. — 2012. — Т. 15, № 1. — С. 13701: 1-7. — Бібліогр.: 18 назв. — англ. |
| series |
Condensed Matter Physics |
| work_keys_str_mv |
AT liyh ballisticspinfilteringacrosstheferromagneticsemiconductorinterface |
| first_indexed |
2023-10-18T20:36:21Z |
| last_indexed |
2023-10-18T20:36:21Z |
| _version_ |
1796150633726738432 |