Accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution
Kinetics of oxygen distribution variation and oxygen clusters (thermodonors) formation is considered and described by a system of nonlinear equations. Analytic solution is obtained for homogeneous nonstationary distribution of oxygen and its complexes. It is shown that due to the interaction of oxyg...
Збережено в:
| Дата: | 2000 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/120230 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution / P.A. Selishchev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 19-21. — Бібліогр.: 10 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Kinetics of oxygen distribution variation and oxygen clusters (thermodonors) formation is considered and described by a system of nonlinear equations. Analytic solution is obtained for homogeneous nonstationary distribution of oxygen and its complexes. It is shown that due to the interaction of oxygen interstitials and their complexes the homogeneous state becomes unstable at some conditions, and spatial periodical distribution develops. Its period lies in the range of 10-1000 Å . |
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