Accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution

Kinetics of oxygen distribution variation and oxygen clusters (thermodonors) formation is considered and described by a system of nonlinear equations. Analytic solution is obtained for homogeneous nonstationary distribution of oxygen and its complexes. It is shown that due to the interaction of oxyg...

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Дата:2000
Автор: Selishchev, P.A.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/120230
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution / P.A. Selishchev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 19-21. — Бібліогр.: 10 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1202302017-06-12T03:05:34Z Accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution Selishchev, P.A. Kinetics of oxygen distribution variation and oxygen clusters (thermodonors) formation is considered and described by a system of nonlinear equations. Analytic solution is obtained for homogeneous nonstationary distribution of oxygen and its complexes. It is shown that due to the interaction of oxygen interstitials and their complexes the homogeneous state becomes unstable at some conditions, and spatial periodical distribution develops. Its period lies in the range of 10-1000 Å . 2000 Article Accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution / P.A. Selishchev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 19-21. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS: 36.40. M, 61.66, 61.72. T, 68.65 http://dspace.nbuv.gov.ua/handle/123456789/120230 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Kinetics of oxygen distribution variation and oxygen clusters (thermodonors) formation is considered and described by a system of nonlinear equations. Analytic solution is obtained for homogeneous nonstationary distribution of oxygen and its complexes. It is shown that due to the interaction of oxygen interstitials and their complexes the homogeneous state becomes unstable at some conditions, and spatial periodical distribution develops. Its period lies in the range of 10-1000 Å .
format Article
author Selishchev, P.A.
spellingShingle Selishchev, P.A.
Accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Selishchev, P.A.
author_sort Selishchev, P.A.
title Accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution
title_short Accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution
title_full Accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution
title_fullStr Accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution
title_full_unstemmed Accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution
title_sort accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2000
url http://dspace.nbuv.gov.ua/handle/123456789/120230
citation_txt Accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution / P.A. Selishchev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 19-21. — Бібліогр.: 10 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT selishchevpa accumulationdynamicsofoxygenclustersinsiliconandformationoftheirnonhomogeneousdistribution
first_indexed 2023-10-18T20:36:33Z
last_indexed 2023-10-18T20:36:33Z
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