Development and optical characteristics of the macroporous silicon structures
The promising material for the 2D photonic structure formation for infrared spectrum range is macroporous silicon. There was investigated the electrochemical process of the cylindrical pore formation on n-Si plates for linear change of applied voltage. The experimental dependences of the regimes of...
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| Дата: | 2000 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/120231 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Development and optical characteristics of the macroporous silicon structures / L.A. Karachevtseva , O.A. Lytvynenko, O.J. Stronska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 22-25. — Бібліогр.: 17 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-120231 |
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irk-123456789-1202312017-06-12T03:05:18Z Development and optical characteristics of the macroporous silicon structures Karachevtseva, L.A. Lytvynenko, O.A. Stronska, O.J. The promising material for the 2D photonic structure formation for infrared spectrum range is macroporous silicon. There was investigated the electrochemical process of the cylindrical pore formation on n-Si plates for linear change of applied voltage. The experimental dependences of the regimes of macropore formation correspond to the diffusion-drift model of the nonequilibrium hole transfer for the anode thickness, that exceed the length of hole diffusion and for comparatively big macropore radii. Optical transmission of the macropore structures was measured and was equal to 10⁻² comparing to that of homogeneous material; surface recombination component was estimated. 2000 Article Development and optical characteristics of the macroporous silicon structures / L.A. Karachevtseva , O.A. Lytvynenko, O.J. Stronska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 22-25. — Бібліогр.: 17 назв. — англ. 1560-8034 PACS: 73.40M, 78.40F http://dspace.nbuv.gov.ua/handle/123456789/120231 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The promising material for the 2D photonic structure formation for infrared spectrum range is macroporous silicon. There was investigated the electrochemical process of the cylindrical pore formation on n-Si plates for linear change of applied voltage. The experimental dependences of the regimes of macropore formation correspond to the diffusion-drift model of the nonequilibrium hole transfer for the anode thickness, that exceed the length of hole diffusion and for comparatively big macropore radii. Optical transmission of the macropore structures was measured and was equal to 10⁻² comparing to that of homogeneous material; surface recombination component was estimated. |
| format |
Article |
| author |
Karachevtseva, L.A. Lytvynenko, O.A. Stronska, O.J. |
| spellingShingle |
Karachevtseva, L.A. Lytvynenko, O.A. Stronska, O.J. Development and optical characteristics of the macroporous silicon structures Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Karachevtseva, L.A. Lytvynenko, O.A. Stronska, O.J. |
| author_sort |
Karachevtseva, L.A. |
| title |
Development and optical characteristics of the macroporous silicon structures |
| title_short |
Development and optical characteristics of the macroporous silicon structures |
| title_full |
Development and optical characteristics of the macroporous silicon structures |
| title_fullStr |
Development and optical characteristics of the macroporous silicon structures |
| title_full_unstemmed |
Development and optical characteristics of the macroporous silicon structures |
| title_sort |
development and optical characteristics of the macroporous silicon structures |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2000 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/120231 |
| citation_txt |
Development and optical characteristics of the macroporous silicon structures / L.A. Karachevtseva , O.A. Lytvynenko, O.J. Stronska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 22-25. — Бібліогр.: 17 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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| first_indexed |
2023-10-18T20:36:34Z |
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2023-10-18T20:36:34Z |
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