Evaluation of the efficiency of interband radiative recombination in high quality Si
It is shown theoretically that quantum efficiency of interband radiation in highly purified silicon with low concentration of deep impurities and defects can exceed 10% at room temperatures in the case of negligibly small surface recombination. Dependencies of quantum efficiency on intensity and wav...
Збережено в:
| Дата: | 1999 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/120242 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Evaluation of the efficiency of interband radiative recombination in high quality Si / A.V. Sachenko, Yu.V. Kryuchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 55-60. — Бібліогр.: 17 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-120242 |
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irk-123456789-1202422017-06-12T03:05:19Z Evaluation of the efficiency of interband radiative recombination in high quality Si Sachenko, A.V. Kryuchenko, Yu.V. It is shown theoretically that quantum efficiency of interband radiation in highly purified silicon with low concentration of deep impurities and defects can exceed 10% at room temperatures in the case of negligibly small surface recombination. Dependencies of quantum efficiency on intensity and wavelength of exciting monochromatic light, surface recombination rate and thickness of silicon plate are discussed. 1999 Article Evaluation of the efficiency of interband radiative recombination in high quality Si / A.V. Sachenko, Yu.V. Kryuchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 55-60. — Бібліогр.: 17 назв. — англ. 1560-8034 PACS 72.20.J, 78.55, 78.60 http://dspace.nbuv.gov.ua/handle/123456789/120242 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
It is shown theoretically that quantum efficiency of interband radiation in highly purified silicon with low concentration of deep impurities and defects can exceed 10% at room temperatures in the case of negligibly small surface recombination. Dependencies of quantum efficiency on intensity and wavelength of exciting monochromatic light, surface recombination rate and thickness of silicon plate are discussed. |
| format |
Article |
| author |
Sachenko, A.V. Kryuchenko, Yu.V. |
| spellingShingle |
Sachenko, A.V. Kryuchenko, Yu.V. Evaluation of the efficiency of interband radiative recombination in high quality Si Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Sachenko, A.V. Kryuchenko, Yu.V. |
| author_sort |
Sachenko, A.V. |
| title |
Evaluation of the efficiency of interband radiative recombination in high quality Si |
| title_short |
Evaluation of the efficiency of interband radiative recombination in high quality Si |
| title_full |
Evaluation of the efficiency of interband radiative recombination in high quality Si |
| title_fullStr |
Evaluation of the efficiency of interband radiative recombination in high quality Si |
| title_full_unstemmed |
Evaluation of the efficiency of interband radiative recombination in high quality Si |
| title_sort |
evaluation of the efficiency of interband radiative recombination in high quality si |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
1999 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/120242 |
| citation_txt |
Evaluation of the efficiency of interband radiative recombination in high quality Si / A.V. Sachenko, Yu.V. Kryuchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 55-60. — Бібліогр.: 17 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:36:34Z |
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2023-10-18T20:36:34Z |
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1796150651250540544 |