Model of optical transitions in A₂B₆ wurtzite type quantum dots
Model of optical transitions in A₂B₆ wurtzite type quantum dots is proposed. It is based on the effective mass approximation and the quantum confinement effects, the valence band degeneracy in G point of the Brillouin zone and the effective mass anisotropy of the holes are also taken into account. A...
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Дата: | 1999 |
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Автор: | |
Формат: | Стаття |
Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/120251 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Цитувати: | Model of optical transitions in A₂B₆ wurtzite type quantum dots / V.P. Kunets // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 23-27. — Бібліогр.: 16 назв. — англ. |
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irk-123456789-1202512017-06-12T03:04:19Z Model of optical transitions in A₂B₆ wurtzite type quantum dots Kunets, V.P. Model of optical transitions in A₂B₆ wurtzite type quantum dots is proposed. It is based on the effective mass approximation and the quantum confinement effects, the valence band degeneracy in G point of the Brillouin zone and the effective mass anisotropy of the holes are also taken into account. A good agreement between the theoretically calculated and experimentally measured absorption spectra of CdSe and ZnxCd₁₋xS wurtzite nanocrystals embedded into a borosilicate glass matrix is achieved in the framework of the model. It is also concluded that the effective mass approximation is yet enough justified for the nanocrystals with the average radius being lowered to ~2.0 nm. 1999 Article Model of optical transitions in A₂B₆ wurtzite type quantum dots / V.P. Kunets // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 23-27. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS 78.66.H. http://dspace.nbuv.gov.ua/handle/123456789/120251 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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DSpace DC |
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English |
description |
Model of optical transitions in A₂B₆ wurtzite type quantum dots is proposed. It is based on the effective mass approximation and the quantum confinement effects, the valence band degeneracy in G point of the Brillouin zone and the effective mass anisotropy of the holes are also taken into account. A good agreement between the theoretically calculated and experimentally measured absorption spectra of CdSe and ZnxCd₁₋xS wurtzite nanocrystals embedded into a borosilicate glass matrix is achieved in the framework of the model. It is also concluded that the effective mass approximation is yet enough justified for the nanocrystals with the average radius being lowered to ~2.0 nm. |
format |
Article |
author |
Kunets, V.P. |
spellingShingle |
Kunets, V.P. Model of optical transitions in A₂B₆ wurtzite type quantum dots Semiconductor Physics Quantum Electronics & Optoelectronics |
author_facet |
Kunets, V.P. |
author_sort |
Kunets, V.P. |
title |
Model of optical transitions in A₂B₆ wurtzite type quantum dots |
title_short |
Model of optical transitions in A₂B₆ wurtzite type quantum dots |
title_full |
Model of optical transitions in A₂B₆ wurtzite type quantum dots |
title_fullStr |
Model of optical transitions in A₂B₆ wurtzite type quantum dots |
title_full_unstemmed |
Model of optical transitions in A₂B₆ wurtzite type quantum dots |
title_sort |
model of optical transitions in a₂b₆ wurtzite type quantum dots |
publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
publishDate |
1999 |
url |
http://dspace.nbuv.gov.ua/handle/123456789/120251 |
citation_txt |
Model of optical transitions in A₂B₆ wurtzite type quantum dots / V.P. Kunets // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 23-27. — Бібліогр.: 16 назв. — англ. |
series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
work_keys_str_mv |
AT kunetsvp modelofopticaltransitionsina2b6wurtzitetypequantumdots |
first_indexed |
2023-10-18T20:36:35Z |
last_indexed |
2023-10-18T20:36:35Z |
_version_ |
1796150643790970880 |