Model of optical transitions in A₂B₆ wurtzite type quantum dots

Model of optical transitions in A₂B₆ wurtzite type quantum dots is proposed. It is based on the effective mass approximation and the quantum confinement effects, the valence band degeneracy in G point of the Brillouin zone and the effective mass anisotropy of the holes are also taken into account. A...

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Видавець:Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Дата:1999
Автор: Kunets, V.P.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/120251
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Цитувати:Model of optical transitions in A₂B₆ wurtzite type quantum dots / V.P. Kunets // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 23-27. — Бібліогр.: 16 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-120251
record_format dspace
spelling irk-123456789-1202512017-06-12T03:04:19Z Model of optical transitions in A₂B₆ wurtzite type quantum dots Kunets, V.P. Model of optical transitions in A₂B₆ wurtzite type quantum dots is proposed. It is based on the effective mass approximation and the quantum confinement effects, the valence band degeneracy in G point of the Brillouin zone and the effective mass anisotropy of the holes are also taken into account. A good agreement between the theoretically calculated and experimentally measured absorption spectra of CdSe and ZnxCd₁₋xS wurtzite nanocrystals embedded into a borosilicate glass matrix is achieved in the framework of the model. It is also concluded that the effective mass approximation is yet enough justified for the nanocrystals with the average radius being lowered to ~2.0 nm. 1999 Article Model of optical transitions in A₂B₆ wurtzite type quantum dots / V.P. Kunets // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 23-27. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS 78.66.H. http://dspace.nbuv.gov.ua/handle/123456789/120251 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Model of optical transitions in A₂B₆ wurtzite type quantum dots is proposed. It is based on the effective mass approximation and the quantum confinement effects, the valence band degeneracy in G point of the Brillouin zone and the effective mass anisotropy of the holes are also taken into account. A good agreement between the theoretically calculated and experimentally measured absorption spectra of CdSe and ZnxCd₁₋xS wurtzite nanocrystals embedded into a borosilicate glass matrix is achieved in the framework of the model. It is also concluded that the effective mass approximation is yet enough justified for the nanocrystals with the average radius being lowered to ~2.0 nm.
format Article
author Kunets, V.P.
spellingShingle Kunets, V.P.
Model of optical transitions in A₂B₆ wurtzite type quantum dots
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Kunets, V.P.
author_sort Kunets, V.P.
title Model of optical transitions in A₂B₆ wurtzite type quantum dots
title_short Model of optical transitions in A₂B₆ wurtzite type quantum dots
title_full Model of optical transitions in A₂B₆ wurtzite type quantum dots
title_fullStr Model of optical transitions in A₂B₆ wurtzite type quantum dots
title_full_unstemmed Model of optical transitions in A₂B₆ wurtzite type quantum dots
title_sort model of optical transitions in a₂b₆ wurtzite type quantum dots
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 1999
url http://dspace.nbuv.gov.ua/handle/123456789/120251
citation_txt Model of optical transitions in A₂B₆ wurtzite type quantum dots / V.P. Kunets // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 23-27. — Бібліогр.: 16 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT kunetsvp modelofopticaltransitionsina2b6wurtzitetypequantumdots
first_indexed 2023-10-18T20:36:35Z
last_indexed 2023-10-18T20:36:35Z
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