Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes
The results of electrical, Hall effect and optical absorption studies of Hg₁₋xMnxTe (x >> 0.1–0.2) single crystals in the temperature range 80 to 300 K are reported. The observed dependences of the Hall coefficient inversion temperature on the acceptor concentration and semiconductor bandgap a...
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| Дата: | 1999 |
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| Автори: | , , , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/120253 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes / L.A. Kosyachenko, I.M. Rarenko, O.O. Bodnaruk, V.M. Frasunyak, V.M. Sklyarchuk, Ye.F. Sklyarchuk, Sun Weiguo, Lu Zheng Xiong // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 31-36. — Бібліогр.: 14 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1202532017-06-12T03:04:44Z Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes Kosyachenko, L.A. Rarenko, I.M. Bodnaruk, O.O. Frasunyak, V.M. Sklyarchuk, V.M. Sklyarchuk, Ye.F. Sun Weiguo Lu Zheng Xiong The results of electrical, Hall effect and optical absorption studies of Hg₁₋xMnxTe (x >> 0.1–0.2) single crystals in the temperature range 80 to 300 K are reported. The observed dependences of the Hall coefficient inversion temperature on the acceptor concentration and semiconductor bandgap are supported by calculations. The long-wavelength absorption edge is treated using the Kane model. The revealed features of the absorption are considered to be caused by small effective mass of electrons in the narrow-gap semiconductors studied. The diodes with p-n junctions produced by ion etching have good rectifying properties determined by carrier generation-recombination, tunneling and avalanche processes. 1999 Article Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes / L.A. Kosyachenko, I.M. Rarenko, O.O. Bodnaruk, V.M. Frasunyak, V.M. Sklyarchuk, Ye.F. Sklyarchuk, Sun Weiguo, Lu Zheng Xiong // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 31-36. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS: 71.28, 72.20.J, 78.40.F, 78.66 http://dspace.nbuv.gov.ua/handle/123456789/120253 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The results of electrical, Hall effect and optical absorption studies of Hg₁₋xMnxTe (x >> 0.1–0.2) single crystals in the temperature range 80 to 300 K are reported. The observed dependences of the Hall coefficient inversion temperature on the acceptor concentration and semiconductor bandgap are supported by calculations. The long-wavelength absorption edge is treated using the Kane model. The revealed features of the absorption are considered to be caused by small effective mass of electrons in the narrow-gap semiconductors studied. The diodes with p-n junctions produced by ion etching have good rectifying properties determined by carrier generation-recombination, tunneling and avalanche processes. |
| format |
Article |
| author |
Kosyachenko, L.A. Rarenko, I.M. Bodnaruk, O.O. Frasunyak, V.M. Sklyarchuk, V.M. Sklyarchuk, Ye.F. Sun Weiguo Lu Zheng Xiong |
| spellingShingle |
Kosyachenko, L.A. Rarenko, I.M. Bodnaruk, O.O. Frasunyak, V.M. Sklyarchuk, V.M. Sklyarchuk, Ye.F. Sun Weiguo Lu Zheng Xiong Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Kosyachenko, L.A. Rarenko, I.M. Bodnaruk, O.O. Frasunyak, V.M. Sklyarchuk, V.M. Sklyarchuk, Ye.F. Sun Weiguo Lu Zheng Xiong |
| author_sort |
Kosyachenko, L.A. |
| title |
Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes |
| title_short |
Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes |
| title_full |
Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes |
| title_fullStr |
Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes |
| title_full_unstemmed |
Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes |
| title_sort |
characterization of hg₁₋xmnxte single crystals and hg₁₋xmnxte -based photodiodes |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
1999 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/120253 |
| citation_txt |
Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes / L.A. Kosyachenko, I.M. Rarenko, O.O. Bodnaruk, V.M. Frasunyak, V.M. Sklyarchuk, Ye.F. Sklyarchuk, Sun Weiguo, Lu Zheng Xiong // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 31-36. — Бібліогр.: 14 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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