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Pre- and postmelting of cadmium telluride

Pre- and postmelting of cadmium telluride

A stepwise character of cadmium telluride melting is shown by using differential thermal analysis and conductivity measurements in the 1323 to 1473 K temperature range. According to the results of differential thermal analysis the parameters of CdTe melting are determined by the premelting processes...

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Main Authors: Shcherbak, L.P., Feichouk, P.I., Plevachouk, Yu.A., Kopach, O.V., Turyanska, L.T.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/120258
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spelling irk-123456789-1202582017-06-12T03:05:22Z Pre- and postmelting of cadmium telluride Shcherbak, L.P. Feichouk, P.I. Plevachouk, Yu.A. Kopach, O.V. Turyanska, L.T. A stepwise character of cadmium telluride melting is shown by using differential thermal analysis and conductivity measurements in the 1323 to 1473 K temperature range. According to the results of differential thermal analysis the parameters of CdTe melting are determined by the premelting processes that are related to defect production in crystal lattice. The crystallization processes are controlled with the melt state (structure) that depends on its maximum temperature. 1999 Article Pre- and postmelting of cadmium telluride / L.P. Shcherbak, P.I. Feichouk, Yu.A. Plevachouk, O.V. Kopach, L.T. Turyanska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 76-80. — Бібліогр.: 21 назв. — англ. 1560-8034 PACS: 72.20, 72.80.P http://dspace.nbuv.gov.ua/handle/123456789/120258 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description A stepwise character of cadmium telluride melting is shown by using differential thermal analysis and conductivity measurements in the 1323 to 1473 K temperature range. According to the results of differential thermal analysis the parameters of CdTe melting are determined by the premelting processes that are related to defect production in crystal lattice. The crystallization processes are controlled with the melt state (structure) that depends on its maximum temperature.
format Article
author Shcherbak, L.P.
Feichouk, P.I.
Plevachouk, Yu.A.
Kopach, O.V.
Turyanska, L.T.
spellingShingle Shcherbak, L.P.
Feichouk, P.I.
Plevachouk, Yu.A.
Kopach, O.V.
Turyanska, L.T.
Pre- and postmelting of cadmium telluride
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Shcherbak, L.P.
Feichouk, P.I.
Plevachouk, Yu.A.
Kopach, O.V.
Turyanska, L.T.
author_sort Shcherbak, L.P.
title Pre- and postmelting of cadmium telluride
title_short Pre- and postmelting of cadmium telluride
title_full Pre- and postmelting of cadmium telluride
title_fullStr Pre- and postmelting of cadmium telluride
title_full_unstemmed Pre- and postmelting of cadmium telluride
title_sort pre- and postmelting of cadmium telluride
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 1999
url http://dspace.nbuv.gov.ua/handle/123456789/120258
citation_txt Pre- and postmelting of cadmium telluride / L.P. Shcherbak, P.I. Feichouk, Yu.A. Plevachouk, O.V. Kopach, L.T. Turyanska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 76-80. — Бібліогр.: 21 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT shcherbaklp preandpostmeltingofcadmiumtelluride
AT feichoukpi preandpostmeltingofcadmiumtelluride
AT plevachoukyua preandpostmeltingofcadmiumtelluride
AT kopachov preandpostmeltingofcadmiumtelluride
AT turyanskalt preandpostmeltingofcadmiumtelluride
first_indexed 2023-10-18T20:36:36Z
last_indexed 2023-10-18T20:36:36Z
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