Pre- and postmelting of cadmium telluride
A stepwise character of cadmium telluride melting is shown by using differential thermal analysis and conductivity measurements in the 1323 to 1473 K temperature range. According to the results of differential thermal analysis the parameters of CdTe melting are determined by the premelting processes...
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| Дата: | 1999 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/120258 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Pre- and postmelting of cadmium telluride / L.P. Shcherbak, P.I. Feichouk, Yu.A. Plevachouk, O.V. Kopach, L.T. Turyanska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 76-80. — Бібліогр.: 21 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-120258 |
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dspace |
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irk-123456789-1202582017-06-12T03:05:22Z Pre- and postmelting of cadmium telluride Shcherbak, L.P. Feichouk, P.I. Plevachouk, Yu.A. Kopach, O.V. Turyanska, L.T. A stepwise character of cadmium telluride melting is shown by using differential thermal analysis and conductivity measurements in the 1323 to 1473 K temperature range. According to the results of differential thermal analysis the parameters of CdTe melting are determined by the premelting processes that are related to defect production in crystal lattice. The crystallization processes are controlled with the melt state (structure) that depends on its maximum temperature. 1999 Article Pre- and postmelting of cadmium telluride / L.P. Shcherbak, P.I. Feichouk, Yu.A. Plevachouk, O.V. Kopach, L.T. Turyanska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 76-80. — Бібліогр.: 21 назв. — англ. 1560-8034 PACS: 72.20, 72.80.P http://dspace.nbuv.gov.ua/handle/123456789/120258 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
A stepwise character of cadmium telluride melting is shown by using differential thermal analysis and conductivity measurements in the 1323 to 1473 K temperature range. According to the results of differential thermal analysis the parameters of CdTe melting are determined by the premelting processes that are related to defect production in crystal lattice. The crystallization processes are controlled with the melt state (structure) that depends on its maximum temperature. |
| format |
Article |
| author |
Shcherbak, L.P. Feichouk, P.I. Plevachouk, Yu.A. Kopach, O.V. Turyanska, L.T. |
| spellingShingle |
Shcherbak, L.P. Feichouk, P.I. Plevachouk, Yu.A. Kopach, O.V. Turyanska, L.T. Pre- and postmelting of cadmium telluride Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Shcherbak, L.P. Feichouk, P.I. Plevachouk, Yu.A. Kopach, O.V. Turyanska, L.T. |
| author_sort |
Shcherbak, L.P. |
| title |
Pre- and postmelting of cadmium telluride |
| title_short |
Pre- and postmelting of cadmium telluride |
| title_full |
Pre- and postmelting of cadmium telluride |
| title_fullStr |
Pre- and postmelting of cadmium telluride |
| title_full_unstemmed |
Pre- and postmelting of cadmium telluride |
| title_sort |
pre- and postmelting of cadmium telluride |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
1999 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/120258 |
| citation_txt |
Pre- and postmelting of cadmium telluride / L.P. Shcherbak, P.I. Feichouk, Yu.A. Plevachouk, O.V. Kopach, L.T. Turyanska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 76-80. — Бібліогр.: 21 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:36:36Z |
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