Fast ion induced luminescence of silica implanted by molecular hydrogen
We studied silica implanted by 420 keV H⁺ and 210 keV H⁺ ions up to absorption doses 3.5⋅ 10²¹ particles per cm³ by ionoluminescence technique. We used some probe beams of molecular and atomic hydrogen ions for luminescence excitation from the implanted samples: 420 keV H⁺, 210 keV and 420 keV H⁺. I...
Збережено в:
| Дата: | 2014 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2014
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| Назва видання: | Functional Materials |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/120381 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Fast ion induced luminescence of silica implanted by molecular hydrogen / O. Kalantaryan, S. Kononenko, V. Zhurenko, N. Zheltopyatova // Functional Materials. — 2014. — Т. 21, № 1. — С. 26-30. — Бібліогр.: 16 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | We studied silica implanted by 420 keV H⁺ and 210 keV H⁺ ions up to absorption doses 3.5⋅ 10²¹ particles per cm³ by ionoluminescence technique. We used some probe beams of molecular and atomic hydrogen ions for luminescence excitation from the implanted samples: 420 keV H⁺, 210 keV and 420 keV H⁺. It was found that significant changes in the spectrum shape of silica were observed at wavelength range of 550-650 nm during continuous ion irradiation. Using different probe beams we performed the comparative luminescence study of the silica samples implanted by H⁺ and H⁺ at the same absorption dose. For these samples we observed the difference in the spectra at wavelength range 610-650 nm, which corresponds to luminescence from non-bridge oxygen centers of silica. The possible explanation of the differences in the spectra shape was suggested. |
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