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The investigation of luminescence properties of nitride-based heterostructures, containing superlattice

The investigation of luminescence properties of nitride-based heterostructures, containing superlattice

The effect of superlattice adding on the luminescence properties of heterostructures based on (Al,In,Ga)N was investigated. It is shown that using structures with two superlattices: the InGaN/InGaN under active region and the AlGaN/GaN as a top p-layer gives the best effect. The elastic stresses on...

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Bibliographic Details
Main Authors: Menkovich, E.A., Solomonov, A.V., Tarasov, S.A., Yurgin, P.A.
Format: Article
Language:English
Published: НТК «Інститут монокристалів» НАН України 2014
Series:Functional Materials
Subjects:
Characterization and properties
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/120406
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Summary:The effect of superlattice adding on the luminescence properties of heterostructures based on (Al,In,Ga)N was investigated. It is shown that using structures with two superlattices: the InGaN/InGaN under active region and the AlGaN/GaN as a top p-layer gives the best effect. The elastic stresses on heterointerface of these structure are compensated optimally. As a result they are the most effective and stable functionality.

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