Role of shallow electronic traps formed by oxygen vacancies in formation of luminescent properties of CeO₂₋x nanocrystals
In the paper methods of thermoluminescence (TSL) and time-resolved spectroscopy were used for investigation of shallow electron traps near edge of 4f⁰ band in CeO₂ and nonstoichiometric CeO₂₋x nanocrystals. It was shown that presence of the electronic traps located about 0.2 eV lower than the bottom...
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| Дата: | 2014 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2014
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| Назва видання: | Functional Materials |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/120408 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Role of shallow electronic traps formed by oxygen vacancies in formation of luminescent properties of CeO₂₋x nanocrystals / P.O. Maksimchuk, V.V. Seminko, I.I. Bespalova, A.A. Masalov // Functional Materials. — 2014. — Т. 21, № 2. — С. 152-157. — Бібліогр.: 23 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-120408 |
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dspace |
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irk-123456789-1204082017-06-13T03:02:25Z Role of shallow electronic traps formed by oxygen vacancies in formation of luminescent properties of CeO₂₋x nanocrystals Maksimchuk, P.O. Seminko, V.V. Bespalova, I.I. Masalov, A.A. Characterization and properties In the paper methods of thermoluminescence (TSL) and time-resolved spectroscopy were used for investigation of shallow electron traps near edge of 4f⁰ band in CeO₂ and nonstoichiometric CeO₂₋x nanocrystals. It was shown that presence of the electronic traps located about 0.2 eV lower than the bottom of 4f⁰ band leads to sufficient modification of O2p-Ce4f excitation relaxation processes due to excitation retrapping. Strong dependence of TSL signal on the stoichiometry of nanocrystal allows to suppose that electronic defects are associated with oxygen vacancies and are formed by F⁺ centers. 2014 Article Role of shallow electronic traps formed by oxygen vacancies in formation of luminescent properties of CeO₂₋x nanocrystals / P.O. Maksimchuk, V.V. Seminko, I.I. Bespalova, A.A. Masalov // Functional Materials. — 2014. — Т. 21, № 2. — С. 152-157. — Бібліогр.: 23 назв. — англ. 1027-5495 DOI: dx.doi.org/10.15407/fm21.02.152 http://dspace.nbuv.gov.ua/handle/123456789/120408 en Functional Materials НТК «Інститут монокристалів» НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| topic |
Characterization and properties Characterization and properties |
| spellingShingle |
Characterization and properties Characterization and properties Maksimchuk, P.O. Seminko, V.V. Bespalova, I.I. Masalov, A.A. Role of shallow electronic traps formed by oxygen vacancies in formation of luminescent properties of CeO₂₋x nanocrystals Functional Materials |
| description |
In the paper methods of thermoluminescence (TSL) and time-resolved spectroscopy were used for investigation of shallow electron traps near edge of 4f⁰ band in CeO₂ and nonstoichiometric CeO₂₋x nanocrystals. It was shown that presence of the electronic traps located about 0.2 eV lower than the bottom of 4f⁰ band leads to sufficient modification of O2p-Ce4f excitation relaxation processes due to excitation retrapping. Strong dependence of TSL signal on the stoichiometry of nanocrystal allows to suppose that electronic defects are associated with oxygen vacancies and are formed by F⁺ centers. |
| format |
Article |
| author |
Maksimchuk, P.O. Seminko, V.V. Bespalova, I.I. Masalov, A.A. |
| author_facet |
Maksimchuk, P.O. Seminko, V.V. Bespalova, I.I. Masalov, A.A. |
| author_sort |
Maksimchuk, P.O. |
| title |
Role of shallow electronic traps formed by oxygen vacancies in formation of luminescent properties of CeO₂₋x nanocrystals |
| title_short |
Role of shallow electronic traps formed by oxygen vacancies in formation of luminescent properties of CeO₂₋x nanocrystals |
| title_full |
Role of shallow electronic traps formed by oxygen vacancies in formation of luminescent properties of CeO₂₋x nanocrystals |
| title_fullStr |
Role of shallow electronic traps formed by oxygen vacancies in formation of luminescent properties of CeO₂₋x nanocrystals |
| title_full_unstemmed |
Role of shallow electronic traps formed by oxygen vacancies in formation of luminescent properties of CeO₂₋x nanocrystals |
| title_sort |
role of shallow electronic traps formed by oxygen vacancies in formation of luminescent properties of ceo₂₋x nanocrystals |
| publisher |
НТК «Інститут монокристалів» НАН України |
| publishDate |
2014 |
| topic_facet |
Characterization and properties |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/120408 |
| citation_txt |
Role of shallow electronic traps formed by oxygen vacancies in formation of luminescent properties of CeO₂₋x nanocrystals / P.O. Maksimchuk, V.V. Seminko, I.I. Bespalova, A.A. Masalov // Functional Materials. — 2014. — Т. 21, № 2. — С. 152-157. — Бібліогр.: 23 назв. — англ. |
| series |
Functional Materials |
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| first_indexed |
2023-10-18T20:36:59Z |
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2023-10-18T20:36:59Z |
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