Heterostructure infrared photodiodes
HgCdTe remains the most important material for infrared photodetectors despite numerous attempts to replace it with alternative materials such as closely related mercury alloys (HgZnTe, HgMnTe), Schottky barriers on silicon, SiGe heterojunctions, AlGaAs multiple quantum wells, GaInSb strain layer su...
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| Дата: | 2000 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/120506 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Heterostructure infrared photodiodes / A. Rogalski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 111-120. — Бібліогр.: 50 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1205062017-06-13T03:04:01Z Heterostructure infrared photodiodes Rogalski, A. HgCdTe remains the most important material for infrared photodetectors despite numerous attempts to replace it with alternative materials such as closely related mercury alloys (HgZnTe, HgMnTe), Schottky barriers on silicon, SiGe heterojunctions, AlGaAs multiple quantum wells, GaInSb strain layer superlattices, high temperature superconductors and especially two types of thermal detectors: pyroelectric detectors and silicon bolometers. It is interesting, however, that none of these competitors can compete in terms of fundamental properties. In addition, HgCdTe exhibits nearly constant lattice parameter that is of extreme importance for new devices based on complex heterostructures. The development of sophisticated controllable vapor phase epitaxial growth methods, such as MBE and MOCVD, has allowed fabrication almost ideally designed heterojunction photodiodes. Examples of novel devices based on heterostructures operating in long wavelength, middle wavelength and short wavelength spectral ranges are presented. 2000 Article Heterostructure infrared photodiodes / A. Rogalski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 111-120. — Бібліогр.: 50 назв. — англ. 1560-8034 PACS: 73.50.P, 85.60.D http://dspace.nbuv.gov.ua/handle/123456789/120506 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
HgCdTe remains the most important material for infrared photodetectors despite numerous attempts to replace it with alternative materials such as closely related mercury alloys (HgZnTe, HgMnTe), Schottky barriers on silicon, SiGe heterojunctions, AlGaAs multiple quantum wells, GaInSb strain layer superlattices, high temperature superconductors and especially two types of thermal detectors: pyroelectric detectors and silicon bolometers. It is interesting, however, that none of these competitors can compete in terms of fundamental properties. In addition, HgCdTe exhibits nearly constant lattice parameter that is of extreme importance for new devices based on complex heterostructures. The development of sophisticated controllable vapor phase epitaxial growth methods, such as MBE and MOCVD, has allowed fabrication almost ideally designed heterojunction photodiodes. Examples of novel devices based on heterostructures operating in long wavelength, middle wavelength and short wavelength spectral ranges are presented. |
| format |
Article |
| author |
Rogalski, A. |
| spellingShingle |
Rogalski, A. Heterostructure infrared photodiodes Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Rogalski, A. |
| author_sort |
Rogalski, A. |
| title |
Heterostructure infrared photodiodes |
| title_short |
Heterostructure infrared photodiodes |
| title_full |
Heterostructure infrared photodiodes |
| title_fullStr |
Heterostructure infrared photodiodes |
| title_full_unstemmed |
Heterostructure infrared photodiodes |
| title_sort |
heterostructure infrared photodiodes |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2000 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/120506 |
| citation_txt |
Heterostructure infrared photodiodes / A. Rogalski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 111-120. — Бібліогр.: 50 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT rogalskia heterostructureinfraredphotodiodes |
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2023-10-18T20:37:10Z |
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2023-10-18T20:37:10Z |
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1796150667486691328 |