Excitonic effects in band-edge luminescence of semiconductors at room temperatures
A theoretical analysis is developed for ascertaining the influence of exciton states on edge luminescence in different semiconductors at high temperatures and high levels of excitation. Screening effects and the Mott transition for excitons have been taken into account using simple relations obtaine...
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| Дата: | 2000 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/120507 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Excitonic effects in band-edge luminescence of semiconductors at room temperatures / A.V. Sachenko, Yu.V. Kryuchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 150-156. — Бібліогр.: 15 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-120507 |
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dspace |
| spelling |
irk-123456789-1205072017-06-13T03:04:53Z Excitonic effects in band-edge luminescence of semiconductors at room temperatures Sachenko, A.V. Kryuchenko, Yu.V. A theoretical analysis is developed for ascertaining the influence of exciton states on edge luminescence in different semiconductors at high temperatures and high levels of excitation. Screening effects and the Mott transition for excitons have been taken into account using simple relations obtained with a variational method. Dependencies of luminescence quantum efficiency on excitation level are discussed. A mechanism of exciton non-radiative annihilation due to Auger recombination via deep impurity levels is analysed as well. It is shown that the probability of this process decreases with an energy of exciton binding. 2000 Article Excitonic effects in band-edge luminescence of semiconductors at room temperatures / A.V. Sachenko, Yu.V. Kryuchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 150-156. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS: 71.35.- y, 72.20.J, 78.55.J, 78.60.J http://dspace.nbuv.gov.ua/handle/123456789/120507 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
A theoretical analysis is developed for ascertaining the influence of exciton states on edge luminescence in different semiconductors at high temperatures and high levels of excitation. Screening effects and the Mott transition for excitons have been taken into account using simple relations obtained with a variational method. Dependencies of luminescence quantum efficiency on excitation level are discussed. A mechanism of exciton non-radiative annihilation due to Auger recombination via deep impurity levels is analysed as well. It is shown that the probability of this process decreases with an energy of exciton binding. |
| format |
Article |
| author |
Sachenko, A.V. Kryuchenko, Yu.V. |
| spellingShingle |
Sachenko, A.V. Kryuchenko, Yu.V. Excitonic effects in band-edge luminescence of semiconductors at room temperatures Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Sachenko, A.V. Kryuchenko, Yu.V. |
| author_sort |
Sachenko, A.V. |
| title |
Excitonic effects in band-edge luminescence of semiconductors at room temperatures |
| title_short |
Excitonic effects in band-edge luminescence of semiconductors at room temperatures |
| title_full |
Excitonic effects in band-edge luminescence of semiconductors at room temperatures |
| title_fullStr |
Excitonic effects in band-edge luminescence of semiconductors at room temperatures |
| title_full_unstemmed |
Excitonic effects in band-edge luminescence of semiconductors at room temperatures |
| title_sort |
excitonic effects in band-edge luminescence of semiconductors at room temperatures |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2000 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/120507 |
| citation_txt |
Excitonic effects in band-edge luminescence of semiconductors at room temperatures / A.V. Sachenko, Yu.V. Kryuchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 150-156. — Бібліогр.: 15 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT sachenkoav excitoniceffectsinbandedgeluminescenceofsemiconductorsatroomtemperatures AT kryuchenkoyuv excitoniceffectsinbandedgeluminescenceofsemiconductorsatroomtemperatures |
| first_indexed |
2023-10-18T20:37:10Z |
| last_indexed |
2023-10-18T20:37:10Z |
| _version_ |
1796150667592597504 |