Photoresponse of Schottky-barrier detector under strong IR laser excitation
Peculiarities of the photovoltaic effect in Ti/n-Si Schottky contact have been studied experimentally under infrared (IR) laser excitation at wavelengths 2.79, 3, 5, 7 and 10.6 mm. We demonstrate that strong laser excitation gives rise to the photovoltage even if an incident photon energy is lower t...
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| Видавець: | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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| Дата: | 2000 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/120510 |
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| Цитувати: | Photoresponse of Schottky-barrier detector under strong IR laser excitation / S. Asmontas, D. Seliuta, E. Sirmulis // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 138-143. — Бібліогр.: 18 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-120510 |
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dspace |
| spelling |
irk-123456789-1205102017-06-13T03:04:02Z Photoresponse of Schottky-barrier detector under strong IR laser excitation Asmontas, S. Seliuta, D. Sirmulis, E. Peculiarities of the photovoltaic effect in Ti/n-Si Schottky contact have been studied experimentally under infrared (IR) laser excitation at wavelengths 2.79, 3, 5, 7 and 10.6 mm. We demonstrate that strong laser excitation gives rise to the photovoltage even if an incident photon energy is lower than Schottky barrier height. In this case the photovoltage as a function of light intensity follows a power-law dependence with the power greater than unity (2...6). The results are interpreted from the viewpoint of electron emission over the potential barrier due to multiphoton or multistep light absorption at the metal-semiconductor interface. 2000 Article Photoresponse of Schottky-barrier detector under strong IR laser excitation / S. Asmontas, D. Seliuta, E. Sirmulis // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 138-143. — Бібліогр.: 18 назв. — англ. 1560-8034 PACS: 73.30.+ y, 73.40.Ns, 73.50.Cr, P http://dspace.nbuv.gov.ua/handle/123456789/120510 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Peculiarities of the photovoltaic effect in Ti/n-Si Schottky contact have been studied experimentally under infrared (IR) laser excitation at wavelengths 2.79, 3, 5, 7 and 10.6 mm. We demonstrate that strong laser excitation gives rise to the photovoltage even if an incident photon energy is lower than Schottky barrier height. In this case the photovoltage as a function of light intensity follows a power-law dependence with the power greater than unity (2...6). The results are interpreted from the viewpoint of electron emission over the potential barrier due to multiphoton or multistep light absorption at the metal-semiconductor interface. |
| format |
Article |
| author |
Asmontas, S. Seliuta, D. Sirmulis, E. |
| spellingShingle |
Asmontas, S. Seliuta, D. Sirmulis, E. Photoresponse of Schottky-barrier detector under strong IR laser excitation Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Asmontas, S. Seliuta, D. Sirmulis, E. |
| author_sort |
Asmontas, S. |
| title |
Photoresponse of Schottky-barrier detector under strong IR laser excitation |
| title_short |
Photoresponse of Schottky-barrier detector under strong IR laser excitation |
| title_full |
Photoresponse of Schottky-barrier detector under strong IR laser excitation |
| title_fullStr |
Photoresponse of Schottky-barrier detector under strong IR laser excitation |
| title_full_unstemmed |
Photoresponse of Schottky-barrier detector under strong IR laser excitation |
| title_sort |
photoresponse of schottky-barrier detector under strong ir laser excitation |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2000 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/120510 |
| citation_txt |
Photoresponse of Schottky-barrier detector under strong IR laser excitation / S. Asmontas, D. Seliuta, E. Sirmulis // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 138-143. — Бібліогр.: 18 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT asmontass photoresponseofschottkybarrierdetectorunderstrongirlaserexcitation AT seliutad photoresponseofschottkybarrierdetectorunderstrongirlaserexcitation AT sirmulise photoresponseofschottkybarrierdetectorunderstrongirlaserexcitation |
| first_indexed |
2023-10-18T20:37:11Z |
| last_indexed |
2023-10-18T20:37:11Z |
| _version_ |
1796150667909267456 |