The influence of defects and conductivity on the domain structure properties and the memory effect in the ferroelectrics-semiconductors Sn₂P₂Se₆
For the proper uniaxial ferroelectrics Sn₂P₂Se₆ with the controlled content of different type of impurities the investigations of dielectric permeability temperature dependence are performed with the aim to determine the influence of the crystal structure defects upon: the efficiency of the thermal...
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| Дата: | 1999 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
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Інститут фізики конденсованих систем НАН України
1999
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| Назва видання: | Condensed Matter Physics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/120525 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | The influence of defects and conductivity on the domain structure properties and the memory effect in the ferroelectrics-semiconductors Sn₂P₂Se₆ / Yu.M. Vysochanskii, A.A. Molnar, M.M. Khoma, S.F. Motrja // Condensed Matter Physics. — 1999. — Т. 2, № 3(19). — С. 421-434. — Бібліогр.: 24 назв. — англ. |
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irk-123456789-1205252017-06-13T03:05:29Z The influence of defects and conductivity on the domain structure properties and the memory effect in the ferroelectrics-semiconductors Sn₂P₂Se₆ Vysochanskii, Yu.M. Molnar, A.A. Khoma, M.M. Motrja, S.F. For the proper uniaxial ferroelectrics Sn₂P₂Se₆ with the controlled content of different type of impurities the investigations of dielectric permeability temperature dependence are performed with the aim to determine the influence of the crystal structure defects upon: the efficiency of the thermal memory effect recording in the incommensurate (IC) phase; the second order phase transition (PT) from the paraelectric phase to the IC phase at temperature Ti and upon the first order PT from IC phase to ferroelectric phase at temperature Tc; the anomalous hysteresis of the dielectric properties temperature dependence in the IC phase; the dielectric contribution of the domain walls in the ferroelectric phase. Static defects smear the anomaly at the PT from paraelectric phase to IC phase, increase the anomalous hysteresis in the IC phase and the hysteresis of the lock-in transition temperature Tc, suppress the dielectric contribution of domain walls in the ferroelectric phase and destroy the memory effect in the IC phase. The increase of the charge carrier concentration also suppresses the dielectric output of the domain walls in the ferroelectric phase but at the same time it supports a more clear memory recording in the IC phase. Such a tendency agrees with the estimations in the mean-field approximation for the characteristics of a domain structure in the ferroelectric phase and memory effect in the IC phase in the ferroelectrics-semiconductors investigated. Для власного одновiсного сегнетоелектрика Sn₂P₂Se₆ з неконтрольованим вмiстом домiшок рiзного типу виконанi дослiдження температурної залежностi дiелектричної проникностi для встановлення впливу дефектностi кристалiчної структури на ефективнiсть запису термiчної “пам’ятi” в неспiвмiрнiй (НС) фазi, на фазовий перехiд (ФП) другого роду з параелектричної фази до НС фази при температурi i та на ФП першого роду з НС фази до сегнетоелектричної фази при температурi c, на аномальний гiстерезис температурної залежностi дiелектричних властивостей в НС фазi, на дiелектричний вклад доменних стiнок у сегнетоелектричнiй фазi. Статичнi дефекти розмивають аномалiї при ФП з параелектричної в НС фазу, збiльшують аномальний гiстерезис в НС фазi та гiстерезис температури c lock-in переходу, подавляють дiелектричний вклад доменних стiнок у сегнетофазi та руйнують ефект “пам’ятi” в НС фазi. Зростання концентрацiї носiїв заряду також подавляє дiелектричний вiдклик доменних стiнок у сегнетоелектричнiй фазi, однак поряд з цим сприяє чiткішому запису ”пам’ятi” в НС фазi. Така тенденцiя погоджується з виконаними оцiнками в наближеннi середнього поля для характеристик доменної структури в сегнетоелектричнiй фазi та для ефекту “пам’ятi” в НС фазi для дослiджуваних сегнетоелектрикiв- напiвпровiдникiв. 1999 Article The influence of defects and conductivity on the domain structure properties and the memory effect in the ferroelectrics-semiconductors Sn₂P₂Se₆ / Yu.M. Vysochanskii, A.A. Molnar, M.M. Khoma, S.F. Motrja // Condensed Matter Physics. — 1999. — Т. 2, № 3(19). — С. 421-434. — Бібліогр.: 24 назв. — англ. 1607-324X DOI:10.5488/CMP.2.3.421 PACS: 64.70.Rh, 67.70.Kb, 64.60.Fr http://dspace.nbuv.gov.ua/handle/123456789/120525 en Condensed Matter Physics Інститут фізики конденсованих систем НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
For the proper uniaxial ferroelectrics Sn₂P₂Se₆ with the controlled content
of different type of impurities the investigations of dielectric permeability
temperature dependence are performed with the aim to determine the influence of the crystal structure defects upon: the efficiency of the thermal
memory effect recording in the incommensurate (IC) phase; the second
order phase transition (PT) from the paraelectric phase to the IC phase
at temperature Ti and upon the first order PT from IC phase to ferroelectric phase at temperature Tc; the anomalous hysteresis of the dielectric
properties temperature dependence in the IC phase; the dielectric contribution of the domain walls in the ferroelectric phase. Static defects smear
the anomaly at the PT from paraelectric phase to IC phase, increase the
anomalous hysteresis in the IC phase and the hysteresis of the lock-in
transition temperature Tc, suppress the dielectric contribution of domain
walls in the ferroelectric phase and destroy the memory effect in the IC
phase. The increase of the charge carrier concentration also suppresses
the dielectric output of the domain walls in the ferroelectric phase but at
the same time it supports a more clear memory recording in the IC phase.
Such a tendency agrees with the estimations in the mean-field approximation for the characteristics of a domain structure in the ferroelectric phase
and memory effect in the IC phase in the ferroelectrics-semiconductors investigated. |
| format |
Article |
| author |
Vysochanskii, Yu.M. Molnar, A.A. Khoma, M.M. Motrja, S.F. |
| spellingShingle |
Vysochanskii, Yu.M. Molnar, A.A. Khoma, M.M. Motrja, S.F. The influence of defects and conductivity on the domain structure properties and the memory effect in the ferroelectrics-semiconductors Sn₂P₂Se₆ Condensed Matter Physics |
| author_facet |
Vysochanskii, Yu.M. Molnar, A.A. Khoma, M.M. Motrja, S.F. |
| author_sort |
Vysochanskii, Yu.M. |
| title |
The influence of defects and conductivity on the domain structure properties and the memory effect in the ferroelectrics-semiconductors Sn₂P₂Se₆ |
| title_short |
The influence of defects and conductivity on the domain structure properties and the memory effect in the ferroelectrics-semiconductors Sn₂P₂Se₆ |
| title_full |
The influence of defects and conductivity on the domain structure properties and the memory effect in the ferroelectrics-semiconductors Sn₂P₂Se₆ |
| title_fullStr |
The influence of defects and conductivity on the domain structure properties and the memory effect in the ferroelectrics-semiconductors Sn₂P₂Se₆ |
| title_full_unstemmed |
The influence of defects and conductivity on the domain structure properties and the memory effect in the ferroelectrics-semiconductors Sn₂P₂Se₆ |
| title_sort |
influence of defects and conductivity on the domain structure properties and the memory effect in the ferroelectrics-semiconductors sn₂p₂se₆ |
| publisher |
Інститут фізики конденсованих систем НАН України |
| publishDate |
1999 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/120525 |
| citation_txt |
The influence of defects and conductivity on the domain structure properties and the memory effect in the ferroelectrics-semiconductors Sn₂P₂Se₆ / Yu.M. Vysochanskii, A.A. Molnar, M.M. Khoma, S.F. Motrja // Condensed Matter Physics. — 1999. — Т. 2, № 3(19). — С. 421-434. — Бібліогр.: 24 назв. — англ. |
| series |
Condensed Matter Physics |
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2023-10-18T20:37:16Z |
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2023-10-18T20:37:16Z |
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