Experimental studies of the recombination processes in II-VI semiconductors (bulk crystals and epilayers) at variable excitation levels
Low-temperature luminescence spectra under broad-scale variation of an excitation level Iexc are studied for ZnS/ZnSe single quantum wells (QW) and for CdS bulk crystals and epilayers. In the first case, the manifestations turn out to be of the heterointerface inhomogeneity - i.e. fluctuations of Q...
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| Дата: | 1999 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики конденсованих систем НАН України
1999
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| Назва видання: | Condensed Matter Physics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/120545 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Experimental studies of the recombination processes in II-VI semiconductors (bulk crystals and epilayers) at variable excitation levels / M.S. Brodyn, S.G. Shevel, V.V. Tishchenko // Condensed Matter Physics. — 1999. — Т. 2, № 3(19). — С. 531-542. — Бібліогр.: 26 назв. — англ. |
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irk-123456789-1205452017-06-13T03:05:36Z Experimental studies of the recombination processes in II-VI semiconductors (bulk crystals and epilayers) at variable excitation levels Brodyn, M.S. Shevel, S.G. Tishchenko, V.V. Low-temperature luminescence spectra under broad-scale variation of an excitation level Iexc are studied for ZnS/ZnSe single quantum wells (QW) and for CdS bulk crystals and epilayers. In the first case, the manifestations turn out to be of the heterointerface inhomogeneity - i.e. fluctuations of QW thickness. The position of the mobility edge for excitons localized by fluctuations is determined. In the second case the effect of the increase of Iexc is systematically studied not only for excitonic but also for impurity-related edge luminescence. Contrary to the earlier and commonly assumed expectations, up to the highest Iexc close to damage threshold no saturation of edge luminescence intensity was observed in bulk CdS crystals, whereas in a few thick epilayers such saturation did occur. The suggested qualitative explanation takes into account diffusion (non-diffusive transport) of carriers beyond the excited near-surface layer. Дослiджено спектри низькотемпературної люмiнесценцiї при варiацiї рiвня збудження I у широкому дiапазонi для одиночних квантових ям (КЯ) ZnS/ZnSe та об’ємних кристалiв i епiтаксiйних шарiв CdS. У першому випадку знайдено прояви неоднорiдностi гетерограницi, тобто флуктуацiй товщини КЯ. Визначено енергетичну позицiю краю рухливостi для екситонiв, локалiзованих на флуктуацiях. У другому випадку систематично вивчений вплив зростання I не лише на екситонну, а й на пов’язану з домiшками крайову люмiнесценцiю. На вiдмiну вiд загальноприйнятих ранiше уявлень, при збiльшеннi I аж до порогу руйнування не спостерiгалося нiякого насичення iнтенсивностi крайової люмiнесценцiї в об’ємних кристалах CdS. У той же час в епiтаксiйних шарах товщиною декiлька мiкронiв таке насичення справдi мало мiсце. Пропонується пояснення на якiсному рiвнi, яке враховує дифузiю (недифузiйний транспорт) носiїв зi збудженого приповерхневого шару. 1999 Article Experimental studies of the recombination processes in II-VI semiconductors (bulk crystals and epilayers) at variable excitation levels / M.S. Brodyn, S.G. Shevel, V.V. Tishchenko // Condensed Matter Physics. — 1999. — Т. 2, № 3(19). — С. 531-542. — Бібліогр.: 26 назв. — англ. 1607-324X DOI:10.5488/CMP.2.3.531 PACS: 78.20.-e http://dspace.nbuv.gov.ua/handle/123456789/120545 en Condensed Matter Physics Інститут фізики конденсованих систем НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Low-temperature luminescence spectra under broad-scale variation of an
excitation level Iexc are studied for ZnS/ZnSe single quantum wells (QW)
and for CdS bulk crystals and epilayers. In the first case, the manifestations
turn out to be of the heterointerface inhomogeneity - i.e. fluctuations of QW
thickness. The position of the mobility edge for excitons localized by fluctuations is determined. In the second case the effect of the increase of Iexc
is systematically studied not only for excitonic but also for impurity-related
edge luminescence. Contrary to the earlier and commonly assumed expectations, up to the highest Iexc close to damage threshold no saturation of
edge luminescence intensity was observed in bulk CdS crystals, whereas
in a few thick epilayers such saturation did occur. The suggested qualitative
explanation takes into account diffusion (non-diffusive transport) of carriers
beyond the excited near-surface layer. |
| format |
Article |
| author |
Brodyn, M.S. Shevel, S.G. Tishchenko, V.V. |
| spellingShingle |
Brodyn, M.S. Shevel, S.G. Tishchenko, V.V. Experimental studies of the recombination processes in II-VI semiconductors (bulk crystals and epilayers) at variable excitation levels Condensed Matter Physics |
| author_facet |
Brodyn, M.S. Shevel, S.G. Tishchenko, V.V. |
| author_sort |
Brodyn, M.S. |
| title |
Experimental studies of the recombination processes in II-VI semiconductors (bulk crystals and epilayers) at variable excitation levels |
| title_short |
Experimental studies of the recombination processes in II-VI semiconductors (bulk crystals and epilayers) at variable excitation levels |
| title_full |
Experimental studies of the recombination processes in II-VI semiconductors (bulk crystals and epilayers) at variable excitation levels |
| title_fullStr |
Experimental studies of the recombination processes in II-VI semiconductors (bulk crystals and epilayers) at variable excitation levels |
| title_full_unstemmed |
Experimental studies of the recombination processes in II-VI semiconductors (bulk crystals and epilayers) at variable excitation levels |
| title_sort |
experimental studies of the recombination processes in ii-vi semiconductors (bulk crystals and epilayers) at variable excitation levels |
| publisher |
Інститут фізики конденсованих систем НАН України |
| publishDate |
1999 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/120545 |
| citation_txt |
Experimental studies of the recombination processes in II-VI semiconductors (bulk crystals and epilayers) at variable excitation levels / M.S. Brodyn, S.G. Shevel, V.V. Tishchenko // Condensed Matter Physics. — 1999. — Т. 2, № 3(19). — С. 531-542. — Бібліогр.: 26 назв. — англ. |
| series |
Condensed Matter Physics |
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2023-10-18T20:37:19Z |
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2023-10-18T20:37:19Z |
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