The nature of red emission in porous silicon
The photoluminescence spectra of porous silicon at 77 and 300 K and their transformation during aging were investigated. The competition of two radiative recombination channels that have a common excitation mechanism was observed. It is shown that only one of them, which causes infrared emission ban...
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| Дата: | 2005 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/120640 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | The nature of red emission in porous silicon / L.Yu. Khomenkova, N.E. Korsunska, B.M. Bulakh, M.K. Sheinkman, T.R. Stara // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 60-63. — Бібліогр.: 17 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-120640 |
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| record_format |
dspace |
| spelling |
irk-123456789-1206402017-06-13T03:02:40Z The nature of red emission in porous silicon Khomenkova, L.Yu. Korsunska, N.E. Bulakh, B.M. Sheinkman, M.K. Stara, T.R. The photoluminescence spectra of porous silicon at 77 and 300 K and their transformation during aging were investigated. The competition of two radiative recombination channels that have a common excitation mechanism was observed. It is shown that only one of them, which causes infrared emission band and is present in as-prepared samples, is connected with excitonic recombination in Si nanocrystals. The second one that causes red emission band appears during aging is supposed to be connected with carrier recombination through oxide-related defects. It is shown that this channel dominates in aged samples. 2005 Article The nature of red emission in porous silicon / L.Yu. Khomenkova, N.E. Korsunska, B.M. Bulakh, M.K. Sheinkman, T.R. Stara // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 60-63. — Бібліогр.: 17 назв. — англ. 1560-8034 PACS: 78.67.-n, 78.30-j, 78.55.-m. http://dspace.nbuv.gov.ua/handle/123456789/120640 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The photoluminescence spectra of porous silicon at 77 and 300 K and their transformation during aging were investigated. The competition of two radiative recombination channels that have a common excitation mechanism was observed. It is shown that only one of them, which causes infrared emission band and is present in as-prepared samples, is connected with excitonic recombination in Si nanocrystals. The second one that causes red emission band appears during aging is supposed to be connected with carrier recombination through oxide-related defects. It is shown that this channel dominates in aged samples. |
| format |
Article |
| author |
Khomenkova, L.Yu. Korsunska, N.E. Bulakh, B.M. Sheinkman, M.K. Stara, T.R. |
| spellingShingle |
Khomenkova, L.Yu. Korsunska, N.E. Bulakh, B.M. Sheinkman, M.K. Stara, T.R. The nature of red emission in porous silicon Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Khomenkova, L.Yu. Korsunska, N.E. Bulakh, B.M. Sheinkman, M.K. Stara, T.R. |
| author_sort |
Khomenkova, L.Yu. |
| title |
The nature of red emission in porous silicon |
| title_short |
The nature of red emission in porous silicon |
| title_full |
The nature of red emission in porous silicon |
| title_fullStr |
The nature of red emission in porous silicon |
| title_full_unstemmed |
The nature of red emission in porous silicon |
| title_sort |
nature of red emission in porous silicon |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2005 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/120640 |
| citation_txt |
The nature of red emission in porous silicon / L.Yu. Khomenkova, N.E. Korsunska, B.M. Bulakh, M.K. Sheinkman, T.R. Stara // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 60-63. — Бібліогр.: 17 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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| first_indexed |
2023-10-18T20:35:55Z |
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2023-10-18T20:35:55Z |
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