Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction
Given in this work are the results of studying the process of creation of diffusion and epitaxial layers in microrelief structures. It has been shown that photoconverting structures with a microrelief interface were different in their efficiency under the used level of the illumination intensity.
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Дата: | 2005 |
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Автори: | , |
Формат: | Стаття |
Мова: | English |
Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/120643 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Цитувати: | Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction / A.V. Karimov, D.M. Yodgorova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 79-82. — Бібліогр.: 5 назв. — англ. |
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irk-123456789-1206432017-06-13T03:04:07Z Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction Karimov, A.V. Yodgorova, D.M. Given in this work are the results of studying the process of creation of diffusion and epitaxial layers in microrelief structures. It has been shown that photoconverting structures with a microrelief interface were different in their efficiency under the used level of the illumination intensity. 2005 Article Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction / A.V. Karimov, D.M. Yodgorova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 79-82. — Бібліогр.: 5 назв. — англ. 1560-8034 PACS: 84.60. Jt http://dspace.nbuv.gov.ua/handle/123456789/120643 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
collection |
DSpace DC |
language |
English |
description |
Given in this work are the results of studying the process of creation of diffusion and epitaxial layers in microrelief structures. It has been shown that photoconverting structures with a microrelief interface were different in their efficiency under the used level of the illumination intensity. |
format |
Article |
author |
Karimov, A.V. Yodgorova, D.M. |
spellingShingle |
Karimov, A.V. Yodgorova, D.M. Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction Semiconductor Physics Quantum Electronics & Optoelectronics |
author_facet |
Karimov, A.V. Yodgorova, D.M. |
author_sort |
Karimov, A.V. |
title |
Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction |
title_short |
Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction |
title_full |
Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction |
title_fullStr |
Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction |
title_full_unstemmed |
Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction |
title_sort |
photoconverters with microrelief p-n-junction on a basis of p alxga₁₋x-p gaas-n gaas-n⁺ gaas heterojunction |
publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
publishDate |
2005 |
url |
http://dspace.nbuv.gov.ua/handle/123456789/120643 |
citation_txt |
Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction / A.V. Karimov, D.M. Yodgorova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 79-82. — Бібліогр.: 5 назв. — англ. |
series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
work_keys_str_mv |
AT karimovav photoconverterswithmicroreliefpnjunctiononabasisofpalxga1xpgaasngaasngaasheterojunction AT yodgorovadm photoconverterswithmicroreliefpnjunctiononabasisofpalxga1xpgaasngaasngaasheterojunction |
first_indexed |
2023-10-18T20:35:56Z |
last_indexed |
2023-10-18T20:35:56Z |
_version_ |
1796150624698499072 |